Low-dielectric Constant Materials, Volume 476Materials Research Society, 1997 - Electric insulators and insulation |
From inside the book
Results 1-3 of 26
Page 49
... FLOW RATIO CF4 : CHF3 Figure 7. Etch selectivities of various SOGS ( T11,418 ) relative to various liner films ( TEOS , A - SION , and B - SION ) vs. gas flow ratio CF4 / CHF3 . 1.5 ETCH RATE SELECTIVITY 1.25 -T11 / TEOS OT11 / A - SION ...
... FLOW RATIO CF4 : CHF3 Figure 7. Etch selectivities of various SOGS ( T11,418 ) relative to various liner films ( TEOS , A - SION , and B - SION ) vs. gas flow ratio CF4 / CHF3 . 1.5 ETCH RATE SELECTIVITY 1.25 -T11 / TEOS OT11 / A - SION ...
Page 280
... flow rate is increased . This last result is the expected conse- quence of the higher deposition rate obtained for higher TEOS flow processes . Our previous work indicated that at least 125 MPa stress is required for dielectric constant ...
... flow rate is increased . This last result is the expected conse- quence of the higher deposition rate obtained for higher TEOS flow processes . Our previous work indicated that at least 125 MPa stress is required for dielectric constant ...
Page 283
... flow . For 0.5 micron gaps , however , the sidewall deposition rate shows a modest increase . In the case of the one micron gap the deposition rate stays about the same . It may be that the plasma etch rate of the sidewall during ...
... flow . For 0.5 micron gaps , however , the sidewall deposition rate shows a modest increase . In the case of the one micron gap the deposition rate stays about the same . It may be that the plasma etch rate of the sidewall during ...
Contents
Polynorbornene for Lowk Interconnection | 3 |
SILK Polymer Coating With LowDielectric Constant | 9 |
F During Oxygen Plasma Annealing | 19 |
Copyright | |
34 other sections not shown
Other editions - View all
Common terms and phrases
adhesion aerogel annealing as-deposited atoms BCB film bond BPDA-PDA capacitance Chemat-B chemical cm¹ CMP process coating copolymers cured films curve decrease delamination density deposition rate device dielectric constant dielectric material diffusion e-beam cured effect electron Figure film stress film thickness films deposited fluorinated polyimide fluorine fluoropolymer FSG films FTEOS films FTIR gap fill glass transition temperature heating in-plane increase integrated circuits interface labile block layer low dielectric constant low-k measured mechanical metal lines modulus moisture Multilevel Interconnection norbornene optical out-of-plane oxide oxygen PA-N film parylene Parylene-N peak PECVD Phys planarization plasma plasma treatment polishing polyimide polymer polymerization precursor pressure Proc properties PTFE ratio reaction refractive index sample shows Si-F Si-O-Si silica silicon SiO2 SiOF films slurry spectra spin-coated spin-on structure substrate surface Teflon-AF temperature TEOS thermal cycles thermal stability thin films ULSI vapor wafer wet etch