Low-dielectric Constant Materials, Volume 476Materials Research Society, 1997 - Electric insulators and insulation |
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Page 69
THE INFLUENCE OF FLUORINE DESORPTION FROM ECR - CVD SiOF FILM Tatsuya USAMI , Hiraku ISHIKAWA , and Hideki GOMI ULSI Device Development Laboratories NEC Corporation 1120 Shimokuzawa Kanagawa , 229 JAPAN ABSTRACT The influence of ...
THE INFLUENCE OF FLUORINE DESORPTION FROM ECR - CVD SiOF FILM Tatsuya USAMI , Hiraku ISHIKAWA , and Hideki GOMI ULSI Device Development Laboratories NEC Corporation 1120 Shimokuzawa Kanagawa , 229 JAPAN ABSTRACT The influence of ...
Page 239
LOW DIELECTRIC CONSTANT FLUORINE DOPED TEOS FILMS VIREN V. S. RANA * , MOHAN BHAN * , ANAND GUPTA * , SOONIL HONG * , AND PETER LEE * Applied Materials , Inc. , 3050 Bowers Ave , Santa Clara , CA 95054 .
LOW DIELECTRIC CONSTANT FLUORINE DOPED TEOS FILMS VIREN V. S. RANA * , MOHAN BHAN * , ANAND GUPTA * , SOONIL HONG * , AND PETER LEE * Applied Materials , Inc. , 3050 Bowers Ave , Santa Clara , CA 95054 .
Page 272
For ( Al ) / Ti / SiOF ( sample e ) , fluorine penetrates deep into ( Al ) . In addition , a trace amount of Ti also diffuses into ( Al ) , at least down to the first several layers , possibly forming an Al - Ti compound like Al3Ti .
For ( Al ) / Ti / SiOF ( sample e ) , fluorine penetrates deep into ( Al ) . In addition , a trace amount of Ti also diffuses into ( Al ) , at least down to the first several layers , possibly forming an Al - Ti compound like Al3Ti .
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Contents
Polynorbornene for Lowk Interconnection | 3 |
High Thermal Stability for ULSI Interlayer Dielectric | 9 |
F During Oxygen Plasma Annealing | 19 |
Copyright | |
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addition adhesion analysis annealing applications atoms bond capacitance chamber chemical coating compared concentration copolymers cost cured curve cycle decrease density dependence deposited determined device dielectric constant diffusion DISCUSSION effect electrical electron energy etch etch rate experiments Figure flow fluorine formed function groups heating higher improved increase indicate integrated interconnect interface layer less lines loss low dielectric constant lower materials measured mechanical metal mode modulus moisture observed obtained occurs oxide oxygen PA-N peak performance plasma polishing polyimide polymer pressure Proc properties range ratio reaction reduced refractive index relative Research resistance respectively sample shown shows Si-F signal silicon SiO2 SiOF films solution spectra strength stress structure substrate surface Table Teflon temperature TEOS thermal thermal stability thickness thin films treatment wafer