Low-dielectric Constant Materials, Volume 476Materials Research Society, 1997 - Electric insulators and insulation |
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Page 46
... fluorocarbons and inert gases , such as CHF3 , CF4 , and Ar , has been proven effective in etching SOG and oxide . CHF3 and CF4 are used as a polymer precursor and main etchant , respectively , while Ar is the carrier gas that also ...
... fluorocarbons and inert gases , such as CHF3 , CF4 , and Ar , has been proven effective in etching SOG and oxide . CHF3 and CF4 are used as a polymer precursor and main etchant , respectively , while Ar is the carrier gas that also ...
Page 62
... fluorocarbon surfaces , with some promising results , little is known of the detailed reaction mechanisms of Cu ( I ) precursors on such surfaces . Still less is known concerning how such precursors react on polymeric surfaces modified ...
... fluorocarbon surfaces , with some promising results , little is known of the detailed reaction mechanisms of Cu ( I ) precursors on such surfaces . Still less is known concerning how such precursors react on polymeric surfaces modified ...
Contents
Polynorbornene for Lowk Interconnection | 3 |
SILK Polymer Coating With LowDielectric Constant | 9 |
F During Oxygen Plasma Annealing | 19 |
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adhesion aerogel annealing as-deposited atoms BCB film bond BPDA-PDA capacitance Chemat-B chemical cm¹ CMP process coating copolymers cured films curve decrease delamination density deposition rate device dielectric constant dielectric material diffusion e-beam cured effect electron Figure film stress film thickness films deposited fluorinated polyimide fluorine fluoropolymer FSG films FTEOS films FTIR gap fill glass transition temperature heating in-plane increase integrated circuits interface labile block layer low dielectric constant low-k measured mechanical metal lines modulus moisture Multilevel Interconnection norbornene optical out-of-plane oxide oxygen PA-N film parylene Parylene-N peak PECVD Phys planarization plasma plasma treatment polishing polyimide polymer polymerization precursor pressure Proc properties PTFE ratio reaction refractive index sample shows Si-F Si-O-Si silica silicon SiO2 SiOF films slurry spectra spin-coated spin-on structure substrate surface Teflon-AF temperature TEOS thermal cycles thermal stability thin films ULSI vapor wafer wet etch