Low-dielectric Constant Materials, Volume 476Materials Research Society, 1997 - Electric insulators and insulation |
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Results 1-3 of 16
Page 64
... followed by annealing to 300 K ( bottom ) and 600 K ( top ) in UHV . Cu ( I ) hfac ( COD ) on Aluminized Teflon - AF 1. TMA on Teflon - AF Binding Energy ( eV ) Fig . 3 Cu ( 2p ) and Cu ( L , VV ) spectra for Cu ( I ) hfac ( COD ) ...
... followed by annealing to 300 K ( bottom ) and 600 K ( top ) in UHV . Cu ( I ) hfac ( COD ) on Aluminized Teflon - AF 1. TMA on Teflon - AF Binding Energy ( eV ) Fig . 3 Cu ( 2p ) and Cu ( L , VV ) spectra for Cu ( I ) hfac ( COD ) ...
Page 115
... followed by a blanket 1 μm thick layer of the FPI which is capped with a 3000Å PE - TEOS SiO2 capping layer deposited at 400 ° C . Prior to capping , the FPI film is first degassed for 60 sec to remove moisture and other volatiles ...
... followed by a blanket 1 μm thick layer of the FPI which is capped with a 3000Å PE - TEOS SiO2 capping layer deposited at 400 ° C . Prior to capping , the FPI film is first degassed for 60 sec to remove moisture and other volatiles ...
Page 233
... followed by a quench on a chill plate at a temperature of 13 ° C . The second method allowed the wafer to gradually heat up to 390 ° C in an oven and then was held at temperature for 1 hour , whereupon the wafer was slowly cooled . The ...
... followed by a quench on a chill plate at a temperature of 13 ° C . The second method allowed the wafer to gradually heat up to 390 ° C in an oven and then was held at temperature for 1 hour , whereupon the wafer was slowly cooled . The ...
Contents
Polynorbornene for Lowk Interconnection | 3 |
SILK Polymer Coating With LowDielectric Constant | 9 |
F During Oxygen Plasma Annealing | 19 |
Copyright | |
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Common terms and phrases
adhesion aerogel annealing as-deposited atoms BCB film bond BPDA-PDA capacitance Chemat-B chemical cm¹ CMP process coating copolymers cured films curve decrease delamination density deposition rate device dielectric constant dielectric material diffusion e-beam cured effect electron Figure film stress film thickness films deposited fluorinated polyimide fluorine fluoropolymer FSG films FTEOS films FTIR gap fill glass transition temperature heating in-plane increase integrated circuits interface labile block layer low dielectric constant low-k measured mechanical metal lines modulus moisture Multilevel Interconnection norbornene optical out-of-plane oxide oxygen PA-N film parylene Parylene-N peak PECVD Phys planarization plasma plasma treatment polishing polyimide polymer polymerization precursor pressure Proc properties PTFE ratio reaction refractive index sample shows Si-F Si-O-Si silica silicon SiO2 SiOF films slurry spectra spin-coated spin-on structure substrate surface Teflon-AF temperature TEOS thermal cycles thermal stability thin films ULSI vapor wafer wet etch