Low-dielectric Constant Materials, Volume 476Materials Research Society, 1997 - Electric insulators and insulation |
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Results 1-3 of 51
Page 70
... formed on the surface of BPSG , the SiOF was deposited followed by CMP . And cap SiO2 film was deposited . Blanket W plug with TiN barrier metal was used for via metal formation . Then the second metal layer was formed . W plug -Second ...
... formed on the surface of BPSG , the SiOF was deposited followed by CMP . And cap SiO2 film was deposited . Blanket W plug with TiN barrier metal was used for via metal formation . Then the second metal layer was formed . W plug -Second ...
Page 77
... formed near the interface , which may represent the oxidation products . From the results obtained , it is clear that oxygen plays a critical role in the ILD / Al interfacial reaction . It can be hypothesized that due to the formation ...
... formed near the interface , which may represent the oxidation products . From the results obtained , it is clear that oxygen plays a critical role in the ILD / Al interfacial reaction . It can be hypothesized that due to the formation ...
Page 95
... formed good foams with measured porosities as high as 30 % . Likewise , high porosity foams of PMDA / 4 - BDAF and 6FXDA / 6FDA were generated . While PMDA / 4 - BDAF has a relatively low T , ( 305 ° C ) , it has a melting transition ...
... formed good foams with measured porosities as high as 30 % . Likewise , high porosity foams of PMDA / 4 - BDAF and 6FXDA / 6FDA were generated . While PMDA / 4 - BDAF has a relatively low T , ( 305 ° C ) , it has a melting transition ...
Contents
Polynorbornene for Lowk Interconnection | 3 |
SILK Polymer Coating With LowDielectric Constant | 9 |
F During Oxygen Plasma Annealing | 19 |
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Common terms and phrases
adhesion aerogel annealing as-deposited atoms BCB film bond BPDA-PDA capacitance Chemat-B chemical cm¹ CMP process coating copolymers cured films curve decrease delamination density deposition rate device dielectric constant dielectric material diffusion e-beam cured effect electron Figure film stress film thickness films deposited fluorinated polyimide fluorine fluoropolymer FSG films FTEOS films FTIR gap fill glass transition temperature heating in-plane increase integrated circuits interface labile block layer low dielectric constant low-k measured mechanical metal lines modulus moisture Multilevel Interconnection norbornene optical out-of-plane oxide oxygen PA-N film parylene Parylene-N peak PECVD Phys planarization plasma plasma treatment polishing polyimide polymer polymerization precursor pressure Proc properties PTFE ratio reaction refractive index sample shows Si-F Si-O-Si silica silicon SiO2 SiOF films slurry spectra spin-coated spin-on structure substrate surface Teflon-AF temperature TEOS thermal cycles thermal stability thin films ULSI vapor wafer wet etch