Low-dielectric Constant Materials, Volume 476Materials Research Society, 1997 - Electric insulators and insulation |
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Page 77
This indicates that there is an amorphous structure formed near the interface ,
which may represent the oxidation products . ... It can be hypothesized that due to
the formation of the oxide layer outside the metal line and perhaps the formation
of ...
This indicates that there is an amorphous structure formed near the interface ,
which may represent the oxidation products . ... It can be hypothesized that due to
the formation of the oxide layer outside the metal line and perhaps the formation
of ...
Page 84
This new componet is formed at 2 . 3 eV below the ... This suggests that copper
oxide ( CuO ) could have formed . The reaction ... The formation of CuO is
furthermore corroborated by a new shoulder on the low energy side ( 530 . 4 eV )
of the ...
This new componet is formed at 2 . 3 eV below the ... This suggests that copper
oxide ( CuO ) could have formed . The reaction ... The formation of CuO is
furthermore corroborated by a new shoulder on the low energy side ( 530 . 4 eV )
of the ...
Page 95
All of the polyimides studied formed foamed structures with the exception of
PMDA / ODA . The orientation of PMDALODA chains and the resultant
anisotropic thermo - mechanical properties cause the foamed strueture to
collapse upon ...
All of the polyimides studied formed foamed structures with the exception of
PMDA / ODA . The orientation of PMDALODA chains and the resultant
anisotropic thermo - mechanical properties cause the foamed strueture to
collapse upon ...
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Contents
SILK Polymer Coating With LowDielectric Constant | 9 |
F During Oxygen Plasma Annealing | 19 |
INTERFACES AND POROUS MATERIALS | 59 |
Copyright | |
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Common terms and phrases
addition adhesion analysis annealing applications atoms bond capacitance chamber chemical coating compared concentration copolymers cost cured curve cycle decrease density dependence deposited determined device dielectric constant diffusion DISCUSSION effect electrical electron energy etch etch rate experiments Figure flow fluorine formed function groups heating higher improved increase indicate integrated interconnect interface layer less lines loss low dielectric constant lower materials measured mechanical metal mode moisture observed obtained occurs oxide oxygen PA-N passivation peak performance plasma polishing polyimide polymer pressure Proc properties range ratio reaction reduced refractive index relative Research resistance respectively sample shown shows Si-F signal silicon SiO2 SiOF films spectra strength stress structure substrate surface Table Teflon temperature TEOS thermal thermal stability thickness thin films treatment wafer