Low-dielectric Constant Materials, Volume 476Materials Research Society, 1997 - Electric insulators and insulation |
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Page 77
This indicates that there is an amorphous structure formed near the interface , which may represent the oxidation products . ... It can be hypothesized that due to the formation of the oxide layer outside the metal line and perhaps the ...
This indicates that there is an amorphous structure formed near the interface , which may represent the oxidation products . ... It can be hypothesized that due to the formation of the oxide layer outside the metal line and perhaps the ...
Page 84
This new componet is formed at 2.3 eV below the main peak of the aromatic carbon group . ... The formation of CuO is furthermore corroborated by a new shoulder on the 402 400 398 396 394 low energy side ( 530.4 eV ) of the oxygen line ...
This new componet is formed at 2.3 eV below the main peak of the aromatic carbon group . ... The formation of CuO is furthermore corroborated by a new shoulder on the 402 400 398 396 394 low energy side ( 530.4 eV ) of the oxygen line ...
Page 95
8 All of the polyimides studied formed foamed structures with the exception of PMDA / ODA . The orientation of PMDA / ODA chains and the resultant anisotropic thermo - mechanical properties cause the foamed structure to collapse upon ...
8 All of the polyimides studied formed foamed structures with the exception of PMDA / ODA . The orientation of PMDA / ODA chains and the resultant anisotropic thermo - mechanical properties cause the foamed structure to collapse upon ...
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Contents
Polynorbornene for Lowk Interconnection | 3 |
High Thermal Stability for ULSI Interlayer Dielectric | 9 |
F During Oxygen Plasma Annealing | 19 |
Copyright | |
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addition adhesion analysis annealing applications atoms bond capacitance chamber chemical coating compared concentration copolymers cost cured curve cycle decrease density dependence deposited determined device dielectric constant diffusion DISCUSSION effect electrical electron energy etch etch rate experiments Figure flow fluorine formed function groups heating higher improved increase indicate integrated interconnect interface layer less lines loss low dielectric constant lower materials measured mechanical metal mode modulus moisture observed obtained occurs oxide oxygen PA-N peak performance plasma polishing polyimide polymer pressure Proc properties range ratio reaction reduced refractive index relative Research resistance respectively sample shown shows Si-F signal silicon SiO2 SiOF films solution spectra strength stress structure substrate surface Table Teflon temperature TEOS thermal thermal stability thickness thin films treatment wafer