Low-dielectric Constant Materials, Volume 476Materials Research Society, 1997 - Electric insulators and insulation |
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Page 6
Elongation to break as a function of alkoxysilane norbornene content . The silane
improves the adhesion of the polymer and increases the elongation to break , but
because the silane is a polar molecule it was anticipated that an increase in ...
Elongation to break as a function of alkoxysilane norbornene content . The silane
improves the adhesion of the polymer and increases the elongation to break , but
because the silane is a polar molecule it was anticipated that an increase in ...
Page 126
3 Stress as a function of temperature for the thermally - cured film . Fig . 4 Stress
as a function of temperature for the low dose e - beam cured film . E - Beam /
High Dose • Heating Phase - Cooling Phase o Heating Phase Cooling Phase
Stress ...
3 Stress as a function of temperature for the thermally - cured film . Fig . 4 Stress
as a function of temperature for the low dose e - beam cured film . E - Beam /
High Dose • Heating Phase - Cooling Phase o Heating Phase Cooling Phase
Stress ...
Page 293
2 AFM surface topography as a function of plasma treatment time : ( a )
nonplasma treated specimen , ( b ) 1 min , ( c ) 3 min , ( d ) 5 min , and ( e ) 10 min
surface surface mim surface 682 684 686 688 690 692 694 696 Binding Energy (
eV ) ...
2 AFM surface topography as a function of plasma treatment time : ( a )
nonplasma treated specimen , ( b ) 1 min , ( c ) 3 min , ( d ) 5 min , and ( e ) 10 min
surface surface mim surface 682 684 686 688 690 692 694 696 Binding Energy (
eV ) ...
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Contents
SILK Polymer Coating With LowDielectric Constant | 9 |
F During Oxygen Plasma Annealing | 19 |
INTERFACES AND POROUS MATERIALS | 59 |
Copyright | |
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Common terms and phrases
addition adhesion analysis annealing applications atoms bond capacitance chamber chemical coating compared concentration copolymers cost cured curve cycle decrease density dependence deposited determined device dielectric constant diffusion DISCUSSION effect electrical electron energy etch etch rate experiments Figure flow fluorine formed function groups heating higher improved increase indicate integrated interconnect interface layer less lines loss low dielectric constant lower materials measured mechanical metal mode moisture observed obtained occurs oxide oxygen PA-N passivation peak performance plasma polishing polyimide polymer pressure Proc properties range ratio reaction reduced refractive index relative Research resistance respectively sample shown shows Si-F signal silicon SiO2 SiOF films spectra strength stress structure substrate surface Table Teflon temperature TEOS thermal thermal stability thickness thin films treatment wafer