Low-dielectric Constant Materials, Volume 476Materials Research Society, 1997 - Electric insulators and insulation |
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Page 116
... gap fill in 0.325 mm wide trenches of ( a ) FPI with additive system # 1 , a low MW plasticizer , and ( b ) additive system # 2 , the low MW plasticizer and high boiling point co - solvent . Table II . Comparison of thin film material ...
... gap fill in 0.325 mm wide trenches of ( a ) FPI with additive system # 1 , a low MW plasticizer , and ( b ) additive system # 2 , the low MW plasticizer and high boiling point co - solvent . Table II . Comparison of thin film material ...
Page 246
... gap fill capability of TEFS based films was strongly dependent on the Si - F concentration . For TEFS based films the best gap fill was obtained for an Si - F concentration of 1 % ( K = 3.8 ) . For TEFS based FTEOS films the gap fill ...
... gap fill capability of TEFS based films was strongly dependent on the Si - F concentration . For TEFS based films the best gap fill was obtained for an Si - F concentration of 1 % ( K = 3.8 ) . For TEFS based FTEOS films the gap fill ...
Page 247
... gap fill capability of FTEOS films , it is inadequate for≤ 0.35 μm technology . Hence , films deposited using high density plasma ( HDP ) CVD systems are required to fill intermetal gaps for ≤0.35 μm technology because of their better gap ...
... gap fill capability of FTEOS films , it is inadequate for≤ 0.35 μm technology . Hence , films deposited using high density plasma ( HDP ) CVD systems are required to fill intermetal gaps for ≤0.35 μm technology because of their better gap ...
Contents
Polynorbornene for Lowk Interconnection | 3 |
SILK Polymer Coating With LowDielectric Constant | 9 |
F During Oxygen Plasma Annealing | 19 |
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adhesion aerogel annealing as-deposited atoms BCB film bond BPDA-PDA capacitance Chemat-B chemical cm¹ CMP process coating copolymers cured films curve decrease delamination density deposition rate device dielectric constant dielectric material diffusion e-beam cured effect electron Figure film stress film thickness films deposited fluorinated polyimide fluorine fluoropolymer FSG films FTEOS films FTIR gap fill glass transition temperature heating in-plane increase integrated circuits interface labile block layer low dielectric constant low-k measured mechanical metal lines modulus moisture Multilevel Interconnection norbornene optical out-of-plane oxide oxygen PA-N film parylene Parylene-N peak PECVD Phys planarization plasma plasma treatment polishing polyimide polymer polymerization precursor pressure Proc properties PTFE ratio reaction refractive index sample shows Si-F Si-O-Si silica silicon SiO2 SiOF films slurry spectra spin-coated spin-on structure substrate surface Teflon-AF temperature TEOS thermal cycles thermal stability thin films ULSI vapor wafer wet etch