Low-dielectric Constant Materials, Volume 476Materials Research Society, 1997 - Electric insulators and insulation |
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Page 35
One method by which voids may be created is to drive out these gases by
heating . The effect of voids on the film is to lower the dielectric constant by
density reduction , since a void will have a dielectric constant close to that of
vacuum .
One method by which voids may be created is to drive out these gases by
heating . The effect of voids on the film is to lower the dielectric constant by
density reduction , since a void will have a dielectric constant close to that of
vacuum .
Page 36
Upon heating of the film in subsequent steps , this material may evaporate from
the film leaving voids . SUMMARY AND CONCLUSIONS This work has shown
that organic films with dielectric constants less than 2 . 2 can be deposited by
high ...
Upon heating of the film in subsequent steps , this material may evaporate from
the film leaving voids . SUMMARY AND CONCLUSIONS This work has shown
that organic films with dielectric constants less than 2 . 2 can be deposited by
high ...
Page 52
Heat treatment of Chemat - B coatings in different atmospheres at different
temperatures with different heating profiles were performed . Characterization at
structural changes performed by FT - IR , SEM , TEM and Auger spectroscopy .
Heat treatment of Chemat - B coatings in different atmospheres at different
temperatures with different heating profiles were performed . Characterization at
structural changes performed by FT - IR , SEM , TEM and Auger spectroscopy .
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Contents
SILK Polymer Coating With LowDielectric Constant | 9 |
F During Oxygen Plasma Annealing | 19 |
INTERFACES AND POROUS MATERIALS | 59 |
Copyright | |
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Common terms and phrases
addition adhesion analysis annealing applications atoms bond capacitance chamber chemical coating compared concentration copolymers cost cured curve cycle decrease density dependence deposited determined device dielectric constant diffusion DISCUSSION effect electrical electron energy etch etch rate experiments Figure flow fluorine formed function groups heating higher improved increase indicate integrated interconnect interface layer less lines loss low dielectric constant lower materials measured mechanical metal mode moisture observed obtained occurs oxide oxygen PA-N passivation peak performance plasma polishing polyimide polymer pressure Proc properties range ratio reaction reduced refractive index relative Research resistance respectively sample shown shows Si-F signal silicon SiO2 SiOF films spectra strength stress structure substrate surface Table Teflon temperature TEOS thermal thermal stability thickness thin films treatment wafer
Bibliographic information
| Title | Low-dielectric Constant Materials, Volume 476 Volume 381; Volume 443; Volume 476; Volume 511; Volume 565 of Materials Research Society symposia proceedings |
| Publisher | Materials Research Society, 1997 |
| Original from | the University of Michigan |
| Digitized | 10 Dec 2007 |
| ISBN | 1558993800, 9781558993808 |
| Export Citation | BiBTeX EndNote RefMan |