Low-dielectric Constant Materials, Volume 476Materials Research Society, 1997 - Electric insulators and insulation |
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Page 35
Its heating indicates that the molecular groups presence may decrease the degree of cross- that make up this band are decreasing . Since linking in the film , which can increase the ring this band is the only portion of the spectrum in ...
Its heating indicates that the molecular groups presence may decrease the degree of cross- that make up this band are decreasing . Since linking in the film , which can increase the ring this band is the only portion of the spectrum in ...
Page 36
Upon heating of the film in subsequent [ 6 ] K. Endo , and T. Tatsumi , MRS Symp . steps , this material may evaporate from the Proc . , 381 , 249 ( 1995 ) . film leaving voids . [ 7 ] A. Grill , and V. Patel , Appl . Phys .
Upon heating of the film in subsequent [ 6 ] K. Endo , and T. Tatsumi , MRS Symp . steps , this material may evaporate from the Proc . , 381 , 249 ( 1995 ) . film leaving voids . [ 7 ] A. Grill , and V. Patel , Appl . Phys .
Page 52
Heat treatment of Chemat - B coatings in different atmospheres at different temperatures with different heating profiles were performed . Characterization at structural changes performed by FT - IR , SEM , TEM and Auger spectroscopy .
Heat treatment of Chemat - B coatings in different atmospheres at different temperatures with different heating profiles were performed . Characterization at structural changes performed by FT - IR , SEM , TEM and Auger spectroscopy .
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Contents
Polynorbornene for Lowk Interconnection | 3 |
High Thermal Stability for ULSI Interlayer Dielectric | 9 |
F During Oxygen Plasma Annealing | 19 |
Copyright | |
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addition adhesion analysis annealing applications atoms bond capacitance chamber chemical coating compared concentration copolymers cost cured curve cycle decrease density dependence deposited determined device dielectric constant diffusion DISCUSSION effect electrical electron energy etch etch rate experiments Figure flow fluorine formed function groups heating higher improved increase indicate integrated interconnect interface layer less lines loss low dielectric constant lower materials measured mechanical metal mode modulus moisture observed obtained occurs oxide oxygen PA-N peak performance plasma polishing polyimide polymer pressure Proc properties range ratio reaction reduced refractive index relative Research resistance respectively sample shown shows Si-F signal silicon SiO2 SiOF films solution spectra strength stress structure substrate surface Table Teflon temperature TEOS thermal thermal stability thickness thin films treatment wafer