Low-dielectric Constant Materials, Volume 476Materials Research Society, 1997 - Electric insulators and insulation |
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Results 1-3 of 42
Page 47
With higher CF4 / CHF3 flow ratio ( Fig . 4 ) , the increase of SOP - 418 etch rate (
solid circle ) is much more pronounced than TEOS ( solid square ) due to less
polymer formation , providing a means of tuning etch selectivity . The SOG non ...
With higher CF4 / CHF3 flow ratio ( Fig . 4 ) , the increase of SOP - 418 etch rate (
solid circle ) is much more pronounced than TEOS ( solid square ) due to less
polymer formation , providing a means of tuning etch selectivity . The SOG non ...
Page 121
Neither swelling nor dissolution was observed for the e - beam cured films after
immersion in N - methylpyrrolidone ( NMP ) at 90 °C for 1 hour . The glass
transition temperature ( T . ) for films cured with a low ebeam dose is slightly
higher than ...
Neither swelling nor dissolution was observed for the e - beam cured films after
immersion in N - methylpyrrolidone ( NMP ) at 90 °C for 1 hour . The glass
transition temperature ( T . ) for films cured with a low ebeam dose is slightly
higher than ...
Page 247
CONCLUSIONS The SiF4 based FTEOS films are stable up to a higher Si - F
concentration and higher annealing temperatures as compared to the TEFS
based films . However , the gap fill capability of TEFS films is better . The SiF4
based ...
CONCLUSIONS The SiF4 based FTEOS films are stable up to a higher Si - F
concentration and higher annealing temperatures as compared to the TEFS
based films . However , the gap fill capability of TEFS films is better . The SiF4
based ...
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Contents
SILK Polymer Coating With LowDielectric Constant | 9 |
F During Oxygen Plasma Annealing | 19 |
INTERFACES AND POROUS MATERIALS | 59 |
Copyright | |
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Common terms and phrases
addition adhesion analysis annealing applications atoms bond capacitance chamber chemical coating compared concentration copolymers cost cured curve cycle decrease density dependence deposited determined device dielectric constant diffusion DISCUSSION effect electrical electron energy etch etch rate experiments Figure flow fluorine formed function groups heating higher improved increase indicate integrated interconnect interface layer less lines loss low dielectric constant lower materials measured mechanical metal mode moisture observed obtained occurs oxide oxygen PA-N passivation peak performance plasma polishing polyimide polymer pressure Proc properties range ratio reaction reduced refractive index relative Research resistance respectively sample shown shows Si-F signal silicon SiO2 SiOF films spectra strength stress structure substrate surface Table Teflon temperature TEOS thermal thermal stability thickness thin films treatment wafer