Low-dielectric Constant Materials, Volume 476Materials Research Society, 1997 - Electric insulators and insulation |
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Page 47
... higher RF power ( Fig . 1 ) and higher magnetic field ( Fig . 3 ) . It is evident that MxP + chamber provides a wide process window in terms of etch rate , uniformity and selectivity . 5000 4500 4000 3500 3000 2500 ETCH RATE ( Å / min ) ...
... higher RF power ( Fig . 1 ) and higher magnetic field ( Fig . 3 ) . It is evident that MxP + chamber provides a wide process window in terms of etch rate , uniformity and selectivity . 5000 4500 4000 3500 3000 2500 ETCH RATE ( Å / min ) ...
Page 121
... higher than , or nearly the same as , the T , for thermally - cured films ( ~ 270 ° C ) . However , the T , for films cured with a high e - beam dose exceeds 400 ° C . Dielectric constants of e - beam cured films and thermally cured ...
... higher than , or nearly the same as , the T , for thermally - cured films ( ~ 270 ° C ) . However , the T , for films cured with a high e - beam dose exceeds 400 ° C . Dielectric constants of e - beam cured films and thermally cured ...
Page 247
... higher annealing temperatures as compared to the TEFS based films . However , the gap fill capability of TEFS films ... higher than 3 % the FTEOS films become unstable . We have identified the presence of Si - F2 bonds as the reason for ...
... higher annealing temperatures as compared to the TEFS based films . However , the gap fill capability of TEFS films ... higher than 3 % the FTEOS films become unstable . We have identified the presence of Si - F2 bonds as the reason for ...
Contents
Polynorbornene for Lowk Interconnection | 3 |
SILK Polymer Coating With LowDielectric Constant | 9 |
F During Oxygen Plasma Annealing | 19 |
Copyright | |
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Common terms and phrases
adhesion aerogel annealing as-deposited atoms BCB film bond BPDA-PDA capacitance Chemat-B chemical cm¹ CMP process coating copolymers cured films curve decrease delamination density deposition rate device dielectric constant dielectric material diffusion e-beam cured effect electron Figure film stress film thickness films deposited fluorinated polyimide fluorine fluoropolymer FSG films FTEOS films FTIR gap fill glass transition temperature heating in-plane increase integrated circuits interface labile block layer low dielectric constant low-k measured mechanical metal lines modulus moisture Multilevel Interconnection norbornene optical out-of-plane oxide oxygen PA-N film parylene Parylene-N peak PECVD Phys planarization plasma plasma treatment polishing polyimide polymer polymerization precursor pressure Proc properties PTFE ratio reaction refractive index sample shows Si-F Si-O-Si silica silicon SiO2 SiOF films slurry spectra spin-coated spin-on structure substrate surface Teflon-AF temperature TEOS thermal cycles thermal stability thin films ULSI vapor wafer wet etch