Low-dielectric Constant Materials, Volume 476Materials Research Society, 1997 - Electric insulators and insulation |
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Page 6
... increased substantially . Therefore , a second functional group which would increase the elongation to break without increasing the dielectric constant would be advantageous . Dielectric Constant & * 2.8 2.7 2.6 2.5 2 2 2 2 2 2 2 2.4 ...
... increased substantially . Therefore , a second functional group which would increase the elongation to break without increasing the dielectric constant would be advantageous . Dielectric Constant & * 2.8 2.7 2.6 2.5 2 2 2 2 2 2 2 2.4 ...
Page 35
... increase the ring statistics ( leading to larger microvoids ) , and increase the volume of material given over to unconnected , low - molecular weight com- pounds that evaporate upon heating . Finally , its presence as a network end ...
... increase the ring statistics ( leading to larger microvoids ) , and increase the volume of material given over to unconnected , low - molecular weight com- pounds that evaporate upon heating . Finally , its presence as a network end ...
Page 241
... increase of Si - F concentration from 0 to 3 % . However , with further increase of Si - F concentration to 5 % , K only decreases to 3.38 . A decrease in dielectric constant value as a result of F incorporation is considered to be due ...
... increase of Si - F concentration from 0 to 3 % . However , with further increase of Si - F concentration to 5 % , K only decreases to 3.38 . A decrease in dielectric constant value as a result of F incorporation is considered to be due ...
Contents
Polynorbornene for Lowk Interconnection | 3 |
SILK Polymer Coating With LowDielectric Constant | 9 |
F During Oxygen Plasma Annealing | 19 |
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Common terms and phrases
adhesion aerogel annealing as-deposited atoms BCB film bond BPDA-PDA capacitance Chemat-B chemical cm¹ CMP process coating copolymers cured films curve decrease delamination density deposition rate device dielectric constant dielectric material diffusion e-beam cured effect electron Figure film stress film thickness films deposited fluorinated polyimide fluorine fluoropolymer FSG films FTEOS films FTIR gap fill glass transition temperature heating in-plane increase integrated circuits interface labile block layer low dielectric constant low-k measured mechanical metal lines modulus moisture Multilevel Interconnection norbornene optical out-of-plane oxide oxygen PA-N film parylene Parylene-N peak PECVD Phys planarization plasma plasma treatment polishing polyimide polymer polymerization precursor pressure Proc properties PTFE ratio reaction refractive index sample shows Si-F Si-O-Si silica silicon SiO2 SiOF films slurry spectra spin-coated spin-on structure substrate surface Teflon-AF temperature TEOS thermal cycles thermal stability thin films ULSI vapor wafer wet etch