Low-dielectric Constant Materials, Volume 476Materials Research Society, 1997 - Electric insulators and insulation |
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Page 6
The addition of the alkoxysilane increased the elongation to break of the polymer to approximately 16 % with 20 mol ... it was anticipated that an increase in the concentration would also increase the dielectric constant of the film .
The addition of the alkoxysilane increased the elongation to break of the polymer to approximately 16 % with 20 mol ... it was anticipated that an increase in the concentration would also increase the dielectric constant of the film .
Page 35
Since linking in the film , which can increase the ring this band is the only portion of the spectrum in statistics ( leading to larger microvoids ) , and which fluorine - containing stretching motion increase the volume of material ...
Since linking in the film , which can increase the ring this band is the only portion of the spectrum in statistics ( leading to larger microvoids ) , and which fluorine - containing stretching motion increase the volume of material ...
Page 241
The dielectric constant of the as - deposited films decreases from 4.20 to 3.42 with the increase of Si - F concentration from 0 to 3 % . However , with further increase of Si - F concentration to 5 % , K only decreases to 3.38 .
The dielectric constant of the as - deposited films decreases from 4.20 to 3.42 with the increase of Si - F concentration from 0 to 3 % . However , with further increase of Si - F concentration to 5 % , K only decreases to 3.38 .
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Contents
Polynorbornene for Lowk Interconnection | 3 |
High Thermal Stability for ULSI Interlayer Dielectric | 9 |
F During Oxygen Plasma Annealing | 19 |
Copyright | |
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addition adhesion analysis annealing applications atoms bond capacitance chamber chemical coating compared concentration copolymers cost cured curve cycle decrease density dependence deposited determined device dielectric constant diffusion DISCUSSION effect electrical electron energy etch etch rate experiments Figure flow fluorine formed function groups heating higher improved increase indicate integrated interconnect interface layer less lines loss low dielectric constant lower materials measured mechanical metal mode modulus moisture observed obtained occurs oxide oxygen PA-N peak performance plasma polishing polyimide polymer pressure Proc properties range ratio reaction reduced refractive index relative Research resistance respectively sample shown shows Si-F signal silicon SiO2 SiOF films solution spectra strength stress structure substrate surface Table Teflon temperature TEOS thermal thermal stability thickness thin films treatment wafer