Low-dielectric Constant Materials, Volume 476Materials Research Society, 1997 - Electric insulators and insulation |
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Results 1-3 of 77
Page 6
The addition of the alkoxysilane increased the elongation to break of the polymer
to approximately 16 % with 20 mol % of ... but because the silane is a polar
molecule it was anticipated that an increase in the concentration would also
increase ...
The addition of the alkoxysilane increased the elongation to break of the polymer
to approximately 16 % with 20 mol % of ... but because the silane is a polar
molecule it was anticipated that an increase in the concentration would also
increase ...
Page 35
Its presence may decrease the degree of cross - linking in the film , which can
increase the ring statistics ( leading to larger microvoids ) , and increase the
volume of material given over to unconnected , low - molecular weight com -
pounds ...
Its presence may decrease the degree of cross - linking in the film , which can
increase the ring statistics ( leading to larger microvoids ) , and increase the
volume of material given over to unconnected , low - molecular weight com -
pounds ...
Page 241
42 with the increase of Si - F concentration from 0 to 3 % . However , with further
increase of Si - F concentration to 5 % , K only decreases to 3 . 38 . A decrease in
dielectric constant value as a result of F incorporation is considered to be due to ...
42 with the increase of Si - F concentration from 0 to 3 % . However , with further
increase of Si - F concentration to 5 % , K only decreases to 3 . 38 . A decrease in
dielectric constant value as a result of F incorporation is considered to be due to ...
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Contents
SILK Polymer Coating With LowDielectric Constant | 9 |
F During Oxygen Plasma Annealing | 19 |
INTERFACES AND POROUS MATERIALS | 59 |
Copyright | |
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Common terms and phrases
addition adhesion analysis annealing applications atoms bond capacitance chamber chemical coating compared concentration copolymers cost cured curve cycle decrease density dependence deposited determined device dielectric constant diffusion DISCUSSION effect electrical electron energy etch etch rate experiments Figure flow fluorine formed function groups heating higher improved increase indicate integrated interconnect interface layer less lines loss low dielectric constant lower materials measured mechanical metal mode moisture observed obtained occurs oxide oxygen PA-N passivation peak performance plasma polishing polyimide polymer pressure Proc properties range ratio reaction reduced refractive index relative Research resistance respectively sample shown shows Si-F signal silicon SiO2 SiOF films spectra strength stress structure substrate surface Table Teflon temperature TEOS thermal thermal stability thickness thin films treatment wafer