Low-dielectric Constant Materials, Volume 476Materials Research Society, 1997 - Electric insulators and insulation |
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Page 6
The addition of the alkoxysilane increased the elongation to break of the polymer
to approximately 16 % with 20 mol % of the alkoxysilane norbornene , Figure 2 .
Elongation to break ( % ) 0 5 10 15 20 Alkoxysilane Norbornene ( mol ...
The addition of the alkoxysilane increased the elongation to break of the polymer
to approximately 16 % with 20 mol % of the alkoxysilane norbornene , Figure 2 .
Elongation to break ( % ) 0 5 10 15 20 Alkoxysilane Norbornene ( mol ...
Page 158
The experimental data indicates the trend of increasing signal amplitude with
increasing wafer motion speed . ... In general , the material removal rate
increases with an increase in wafer motion speed or pressure applied on a wafer
, and can ...
The experimental data indicates the trend of increasing signal amplitude with
increasing wafer motion speed . ... In general , the material removal rate
increases with an increase in wafer motion speed or pressure applied on a wafer
, and can ...
Page 242
The lack of a decrease in K with increasing Si - F concentration is an indication of
the instability of these films . Figure 4 shows the effect of increasing F
concentration on the Si - F peak intensity , as obtained by FTIR for Sif , doped
FTEOS films .
The lack of a decrease in K with increasing Si - F concentration is an indication of
the instability of these films . Figure 4 shows the effect of increasing F
concentration on the Si - F peak intensity , as obtained by FTIR for Sif , doped
FTEOS films .
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Contents
SILK Polymer Coating With LowDielectric Constant | 9 |
F During Oxygen Plasma Annealing | 19 |
INTERFACES AND POROUS MATERIALS | 59 |
Copyright | |
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Common terms and phrases
addition adhesion analysis annealing applications atoms bond capacitance chamber chemical coating compared concentration copolymers cost cured curve cycle decrease density dependence deposited determined device dielectric constant diffusion DISCUSSION effect electrical electron energy etch etch rate experiments Figure flow fluorine formed function groups heating higher improved increase indicate integrated interconnect interface layer less lines loss low dielectric constant lower materials measured mechanical metal mode moisture observed obtained occurs oxide oxygen PA-N passivation peak performance plasma polishing polyimide polymer pressure Proc properties range ratio reaction reduced refractive index relative Research resistance respectively sample shown shows Si-F signal silicon SiO2 SiOF films spectra strength stress structure substrate surface Table Teflon temperature TEOS thermal thermal stability thickness thin films treatment wafer
Bibliographic information
| Title | Low-dielectric Constant Materials, Volume 476 Volume 381; Volume 443; Volume 476; Volume 511; Volume 565 of Materials Research Society symposia proceedings |
| Publisher | Materials Research Society, 1997 |
| Original from | the University of Michigan |
| Digitized | 10 Dec 2007 |
| ISBN | 1558993800, 9781558993808 |
| Export Citation | BiBTeX EndNote RefMan |