Low-dielectric Constant Materials, Volume 476Materials Research Society, 1997 - Electric insulators and insulation |
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Page 37
Shorter cure times result in similar structure and properties as the baseline cure which suggests that lower temperature and / or shorter cure time may provide value worth investigating by integrated circuit manufacturers .
Shorter cure times result in similar structure and properties as the baseline cure which suggests that lower temperature and / or shorter cure time may provide value worth investigating by integrated circuit manufacturers .
Page 87
To this end , we are actively in search of low dielectric constant materials that can be integrated into integrated circuit production . The greatest limiting factor in materials qualification are the stringent IC processing conditions ...
To this end , we are actively in search of low dielectric constant materials that can be integrated into integrated circuit production . The greatest limiting factor in materials qualification are the stringent IC processing conditions ...
Page 197
In the end , the dielectric is only validated by its performance after incorporation into an integrated circuit and ... consideration needs to be given to those materials which will successfully integrate into an integrated circuit .
In the end , the dielectric is only validated by its performance after incorporation into an integrated circuit and ... consideration needs to be given to those materials which will successfully integrate into an integrated circuit .
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Contents
Polynorbornene for Lowk Interconnection | 3 |
High Thermal Stability for ULSI Interlayer Dielectric | 9 |
F During Oxygen Plasma Annealing | 19 |
Copyright | |
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Common terms and phrases
addition adhesion analysis annealing applications atoms bond capacitance chamber chemical coating compared concentration copolymers cost cured curve cycle decrease density dependence deposited determined device dielectric constant diffusion DISCUSSION effect electrical electron energy etch etch rate experiments Figure flow fluorine formed function groups heating higher improved increase indicate integrated interconnect interface layer less lines loss low dielectric constant lower materials measured mechanical metal mode modulus moisture observed obtained occurs oxide oxygen PA-N peak performance plasma polishing polyimide polymer pressure Proc properties range ratio reaction reduced refractive index relative Research resistance respectively sample shown shows Si-F signal silicon SiO2 SiOF films solution spectra strength stress structure substrate surface Table Teflon temperature TEOS thermal thermal stability thickness thin films treatment wafer
Bibliographic information
| Title | Low-dielectric Constant Materials, Volume 476 Volume 381; Volume 443; Volume 476; Volume 511; Volume 565 of Materials Research Society symposia proceedings |
| Publisher | Materials Research Society, 1997 |
| Original from | the University of Michigan |
| Digitized | 10 Dec 2007 |
| ISBN | 1558993800, 9781558993808 |
| Export Citation | BiBTeX EndNote RefMan |