Low-dielectric Constant Materials, Volume 476Materials Research Society, 1997 - Electric insulators and insulation |
From inside the book
Results 1-3 of 32
Page 9
... integration of these materials within existing interconnect processes creates challenges to the material properties and integration technology . To date , no Low - k organic dielectrics have been reported which have sufficient thermal ...
... integration of these materials within existing interconnect processes creates challenges to the material properties and integration technology . To date , no Low - k organic dielectrics have been reported which have sufficient thermal ...
Page 113
... integration characteristics , primarily in the area of deep sub - micron gap filling . The avenues taken to attain these objectives will be illustrated . Subsequent integration of low k fluorinated polyimides has been achieved for a ...
... integration characteristics , primarily in the area of deep sub - micron gap filling . The avenues taken to attain these objectives will be illustrated . Subsequent integration of low k fluorinated polyimides has been achieved for a ...
Page 177
... integration costs will gate whether a material can considered as a candidate for production . even be Silica based glasses , with dielectric constant ( k ) ≈4 , have been used for decades to isolate the metal lines on integrated ...
... integration costs will gate whether a material can considered as a candidate for production . even be Silica based glasses , with dielectric constant ( k ) ≈4 , have been used for decades to isolate the metal lines on integrated ...
Contents
Polynorbornene for Lowk Interconnection | 3 |
SILK Polymer Coating With LowDielectric Constant | 9 |
F During Oxygen Plasma Annealing | 19 |
Copyright | |
34 other sections not shown
Other editions - View all
Common terms and phrases
adhesion aerogel annealing as-deposited atoms BCB film bond BPDA-PDA capacitance Chemat-B chemical cm¹ CMP process coating copolymers cured films curve decrease delamination density deposition rate device dielectric constant dielectric material diffusion e-beam cured effect electron Figure film stress film thickness films deposited fluorinated polyimide fluorine fluoropolymer FSG films FTEOS films FTIR gap fill glass transition temperature heating in-plane increase integrated circuits interface labile block layer low dielectric constant low-k measured mechanical metal lines modulus moisture Multilevel Interconnection norbornene optical out-of-plane oxide oxygen PA-N film parylene Parylene-N peak PECVD Phys planarization plasma plasma treatment polishing polyimide polymer polymerization precursor pressure Proc properties PTFE ratio reaction refractive index sample shows Si-F Si-O-Si silica silicon SiO2 SiOF films slurry spectra spin-coated spin-on structure substrate surface Teflon-AF temperature TEOS thermal cycles thermal stability thin films ULSI vapor wafer wet etch