Low-dielectric Constant Materials, Volume 476Materials Research Society, 1997 - Electric insulators and insulation |
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Page 51
Low dielectric constants ( k ) mean lower capacitances and therefore shorter RC delays , faster device speeds , less crosstalk and less power dissipation . There are several activities in the development of low dielectric constant ...
Low dielectric constants ( k ) mean lower capacitances and therefore shorter RC delays , faster device speeds , less crosstalk and less power dissipation . There are several activities in the development of low dielectric constant ...
Page 62
Still less is known concerning how such precursors react on polymeric surfaces modified by very low coverages of oxidized aluminum . In section II , the experimental methods used in this study are discussed .
Still less is known concerning how such precursors react on polymeric surfaces modified by very low coverages of oxidized aluminum . In section II , the experimental methods used in this study are discussed .
Page 105
... dielectric constant ( models suggest values less than 2.01,2 ) . Also , porous silica uses similar precursors ( e.g. tetraethoxysilane , TEOS ) as those used for spin - on glass and CVD deposited SiO2 ? However , some issues must be ...
... dielectric constant ( models suggest values less than 2.01,2 ) . Also , porous silica uses similar precursors ( e.g. tetraethoxysilane , TEOS ) as those used for spin - on glass and CVD deposited SiO2 ? However , some issues must be ...
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Contents
Polynorbornene for Lowk Interconnection | 3 |
High Thermal Stability for ULSI Interlayer Dielectric | 9 |
F During Oxygen Plasma Annealing | 19 |
Copyright | |
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Common terms and phrases
addition adhesion analysis annealing applications atoms bond capacitance chamber chemical coating compared concentration copolymers cost cured curve cycle decrease density dependence deposited determined device dielectric constant diffusion DISCUSSION effect electrical electron energy etch etch rate experiments Figure flow fluorine formed function groups heating higher improved increase indicate integrated interconnect interface layer less lines loss low dielectric constant lower materials measured mechanical metal mode modulus moisture observed obtained occurs oxide oxygen PA-N peak performance plasma polishing polyimide polymer pressure Proc properties range ratio reaction reduced refractive index relative Research resistance respectively sample shown shows Si-F signal silicon SiO2 SiOF films solution spectra strength stress structure substrate surface Table Teflon temperature TEOS thermal thermal stability thickness thin films treatment wafer
Bibliographic information
| Title | Low-dielectric Constant Materials, Volume 476 Volume 381; Volume 443; Volume 476; Volume 511; Volume 565 of Materials Research Society symposia proceedings |
| Publisher | Materials Research Society, 1997 |
| Original from | the University of Michigan |
| Digitized | 10 Dec 2007 |
| ISBN | 1558993800, 9781558993808 |
| Export Citation | BiBTeX EndNote RefMan |