Low-dielectric Constant Materials, Volume 476Materials Research Society, 1997 - Electric insulators and insulation |
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Page 51
Low dielectric constants ( k ) mean lower capacitances and therefore shorter RC
delays , faster device speeds , less crosstalk and less power dissipation . There
are several activities in the development of low dielectric constant materials .
Low dielectric constants ( k ) mean lower capacitances and therefore shorter RC
delays , faster device speeds , less crosstalk and less power dissipation . There
are several activities in the development of low dielectric constant materials .
Page 62
Still less is known concerning how such precursors react on polymeric surfaces
modified by very low coverages of oxidized aluminum . In section II , the
experimental methods used in this study are discussed . Section III contains a
description ...
Still less is known concerning how such precursors react on polymeric surfaces
modified by very low coverages of oxidized aluminum . In section II , the
experimental methods used in this study are discussed . Section III contains a
description ...
Page 105
... chip dielectric material is attractive for its predicted low dielectric constant (
models suggest values less than 2 . 0 ' , - ) . Also , porous silica uses similar
precursors ( e . g . tetraethoxysilane , TEOS ) as those used for spin - on glass
and CVD ...
... chip dielectric material is attractive for its predicted low dielectric constant (
models suggest values less than 2 . 0 ' , - ) . Also , porous silica uses similar
precursors ( e . g . tetraethoxysilane , TEOS ) as those used for spin - on glass
and CVD ...
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Contents
SILK Polymer Coating With LowDielectric Constant | 9 |
F During Oxygen Plasma Annealing | 19 |
INTERFACES AND POROUS MATERIALS | 59 |
Copyright | |
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Common terms and phrases
addition adhesion analysis annealing applications atoms bond capacitance chamber chemical coating compared concentration copolymers cost cured curve cycle decrease density dependence deposited determined device dielectric constant diffusion DISCUSSION effect electrical electron energy etch etch rate experiments Figure flow fluorine formed function groups heating higher improved increase indicate integrated interconnect interface layer less lines loss low dielectric constant lower materials measured mechanical metal mode moisture observed obtained occurs oxide oxygen PA-N passivation peak performance plasma polishing polyimide polymer pressure Proc properties range ratio reaction reduced refractive index relative Research resistance respectively sample shown shows Si-F signal silicon SiO2 SiOF films spectra strength stress structure substrate surface Table Teflon temperature TEOS thermal thermal stability thickness thin films treatment wafer
Bibliographic information
| Title | Low-dielectric Constant Materials, Volume 476 Volume 381; Volume 443; Volume 476; Volume 511; Volume 565 of Materials Research Society symposia proceedings |
| Publisher | Materials Research Society, 1997 |
| Original from | the University of Michigan |
| Digitized | 10 Dec 2007 |
| ISBN | 1558993800, 9781558993808 |
| Export Citation | BiBTeX EndNote RefMan |