Low-dielectric Constant Materials, Volume 476Materials Research Society, 1997 - Electric insulators and insulation |
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Page 13
... lines on a 0.75 μm pitch . The Al lines have been coated with a CVD oxide layer . This deposit causes the gap aperture to pinch down to less than 0.05 μm . SILK successfully fills the wine bottle shaped gap between the lines with no ...
... lines on a 0.75 μm pitch . The Al lines have been coated with a CVD oxide layer . This deposit causes the gap aperture to pinch down to less than 0.05 μm . SILK successfully fills the wine bottle shaped gap between the lines with no ...
Page 131
... lines were 0.50 μm wide , with 0.48 μm separation between adjacent lines . For the three fabricated splits , Ccrosstalk was measured at 1 kHz using an HP4194A Imped- ance / Gain - Phase Analyzer . The schematic of the measured test ...
... lines were 0.50 μm wide , with 0.48 μm separation between adjacent lines . For the three fabricated splits , Ccrosstalk was measured at 1 kHz using an HP4194A Imped- ance / Gain - Phase Analyzer . The schematic of the measured test ...
Page 290
... lines . We compared the amount of strain in the metal lines and found that they are equal . We also took AFM images of the surface of the metal lines at different applied strains and found that the amount of deformation and fracturing ...
... lines . We compared the amount of strain in the metal lines and found that they are equal . We also took AFM images of the surface of the metal lines at different applied strains and found that the amount of deformation and fracturing ...
Contents
Polynorbornene for Lowk Interconnection | 3 |
SILK Polymer Coating With LowDielectric Constant | 9 |
F During Oxygen Plasma Annealing | 19 |
Copyright | |
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adhesion aerogel annealing as-deposited atoms BCB film bond BPDA-PDA capacitance Chemat-B chemical cm¹ CMP process coating copolymers cured films curve decrease delamination density deposition rate device dielectric constant dielectric material diffusion e-beam cured effect electron Figure film stress film thickness films deposited fluorinated polyimide fluorine fluoropolymer FSG films FTEOS films FTIR gap fill glass transition temperature heating in-plane increase integrated circuits interface labile block layer low dielectric constant low-k measured mechanical metal lines modulus moisture Multilevel Interconnection norbornene optical out-of-plane oxide oxygen PA-N film parylene Parylene-N peak PECVD Phys planarization plasma plasma treatment polishing polyimide polymer polymerization precursor pressure Proc properties PTFE ratio reaction refractive index sample shows Si-F Si-O-Si silica silicon SiO2 SiOF films slurry spectra spin-coated spin-on structure substrate surface Teflon-AF temperature TEOS thermal cycles thermal stability thin films ULSI vapor wafer wet etch