Low-dielectric Constant Materials, Volume 476Materials Research Society, 1997 - Electric insulators and insulation |
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Page 13
Figure 3 shows an SEM cross - sectional view of gaps between 0.25 um Al lines on a 0.75 um pitch . The Al lines have been coated with a CVD oxide layer . This deposit causes the gap aperture to pinch down to less than 0.05 um .
Figure 3 shows an SEM cross - sectional view of gaps between 0.25 um Al lines on a 0.75 um pitch . The Al lines have been coated with a CVD oxide layer . This deposit causes the gap aperture to pinch down to less than 0.05 um .
Page 131
Following chemo - mechanical polishing ( CMP ) of the excess metal to form the inlaid lines , the wafers were divided into three splits , respectively passivated by ( 1 ) air , ( 2 ) 1.2 - um TEOS , and ( 3 ) 1.2 - um FPI - 136M .
Following chemo - mechanical polishing ( CMP ) of the excess metal to form the inlaid lines , the wafers were divided into three splits , respectively passivated by ( 1 ) air , ( 2 ) 1.2 - um TEOS , and ( 3 ) 1.2 - um FPI - 136M .
Page 290
We compared the amount of strain in the metal lines and found that they are equal . ... Figure 9 ( a ) and ( b ) show AFM images of two lines ; in one case the BPDA - PDA was sputtered at 360 volts for 70 seconds , and in the other line ...
We compared the amount of strain in the metal lines and found that they are equal . ... Figure 9 ( a ) and ( b ) show AFM images of two lines ; in one case the BPDA - PDA was sputtered at 360 volts for 70 seconds , and in the other line ...
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Contents
Polynorbornene for Lowk Interconnection | 3 |
High Thermal Stability for ULSI Interlayer Dielectric | 9 |
F During Oxygen Plasma Annealing | 19 |
Copyright | |
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Common terms and phrases
addition adhesion analysis annealing applications atoms bond capacitance chamber chemical coating compared concentration copolymers cost cured curve cycle decrease density dependence deposited determined device dielectric constant diffusion DISCUSSION effect electrical electron energy etch etch rate experiments Figure flow fluorine formed function groups heating higher improved increase indicate integrated interconnect interface layer less lines loss low dielectric constant lower materials measured mechanical metal mode modulus moisture observed obtained occurs oxide oxygen PA-N peak performance plasma polishing polyimide polymer pressure Proc properties range ratio reaction reduced refractive index relative Research resistance respectively sample shown shows Si-F signal silicon SiO2 SiOF films solution spectra strength stress structure substrate surface Table Teflon temperature TEOS thermal thermal stability thickness thin films treatment wafer
Bibliographic information
| Title | Low-dielectric Constant Materials, Volume 476 Volume 381; Volume 443; Volume 476; Volume 511; Volume 565 of Materials Research Society symposia proceedings |
| Publisher | Materials Research Society, 1997 |
| Original from | the University of Michigan |
| Digitized | 10 Dec 2007 |
| ISBN | 1558993800, 9781558993808 |
| Export Citation | BiBTeX EndNote RefMan |