Low-dielectric Constant Materials, Volume 476Materials Research Society, 1997 - Electric insulators and insulation |
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Page 13
Gap Fill The integration of a spin - on dielectric into a subtractively patterned
metal interconnect process requires that the spin - on material fill the trenches
between adjacent lines in a predictable way . Although the introduction of inlaid ...
Gap Fill The integration of a spin - on dielectric into a subtractively patterned
metal interconnect process requires that the spin - on material fill the trenches
between adjacent lines in a predictable way . Although the introduction of inlaid ...
Page 131
Following chemo - mechanical polishing ( CMP ) of the excess metal to form the
inlaid lines , the wafers were divided into three splits , respectively passivated by
( 1 ) air , ( 2 ) 1 . 2 - um TEOS , and ( 3 ) 1 . 2 - um FPI - 136M . For the FPI - 136M
...
Following chemo - mechanical polishing ( CMP ) of the excess metal to form the
inlaid lines , the wafers were divided into three splits , respectively passivated by
( 1 ) air , ( 2 ) 1 . 2 - um TEOS , and ( 3 ) 1 . 2 - um FPI - 136M . For the FPI - 136M
...
Page 290
5 100 RF , T = 200nm , W = 32 , 15 % Figure 9 ( b ) : non - RF Deformation The
difference in stress can come from either a difference in the effective strength of
the interface or a reduction in the strain and deformation of the metal lines .
5 100 RF , T = 200nm , W = 32 , 15 % Figure 9 ( b ) : non - RF Deformation The
difference in stress can come from either a difference in the effective strength of
the interface or a reduction in the strain and deformation of the metal lines .
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Contents
SILK Polymer Coating With LowDielectric Constant | 9 |
F During Oxygen Plasma Annealing | 19 |
INTERFACES AND POROUS MATERIALS | 59 |
Copyright | |
24 other sections not shown
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Common terms and phrases
addition adhesion analysis annealing applications atoms bond capacitance chamber chemical coating compared concentration copolymers cost cured curve cycle decrease density dependence deposited determined device dielectric constant diffusion DISCUSSION effect electrical electron energy etch etch rate experiments Figure flow fluorine formed function groups heating higher improved increase indicate integrated interconnect interface layer less lines loss low dielectric constant lower materials measured mechanical metal mode moisture observed obtained occurs oxide oxygen PA-N passivation peak performance plasma polishing polyimide polymer pressure Proc properties range ratio reaction reduced refractive index relative Research resistance respectively sample shown shows Si-F signal silicon SiO2 SiOF films spectra strength stress structure substrate surface Table Teflon temperature TEOS thermal thermal stability thickness thin films treatment wafer
Bibliographic information
| Title | Low-dielectric Constant Materials, Volume 476 Volume 381; Volume 443; Volume 476; Volume 511; Volume 565 of Materials Research Society symposia proceedings |
| Publisher | Materials Research Society, 1997 |
| Original from | the University of Michigan |
| Digitized | 10 Dec 2007 |
| ISBN | 1558993800, 9781558993808 |
| Export Citation | BiBTeX EndNote RefMan |