Low-dielectric Constant Materials, Volume 476Materials Research Society, 1997 - Electric insulators and insulation |
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Results 1-3 of 24
Page 12
... loss for this sample was 0.7 wt . % / hr . Due to difficulties with the absolute quantification of this measurement , a large number of samples has been analyzed . The equilibrium mass loss values for all of these samples was in the ...
... loss for this sample was 0.7 wt . % / hr . Due to difficulties with the absolute quantification of this measurement , a large number of samples has been analyzed . The equilibrium mass loss values for all of these samples was in the ...
Page 52
... loss of Chemat - B occured in the first 5 minutes , and converted to a stable material under that condition . Heat ... loss during the heat treatment . This is due to the organic burn - off of the polymer . However , from the TGA data ...
... loss of Chemat - B occured in the first 5 minutes , and converted to a stable material under that condition . Heat ... loss during the heat treatment . This is due to the organic burn - off of the polymer . However , from the TGA data ...
Page 213
... loss and thickness loss of the films were measured after thermal cycling the films to 450 ° C and no significant differences were observed . This result indicates that the observed increase in surface roughness with increased vaporizer ...
... loss and thickness loss of the films were measured after thermal cycling the films to 450 ° C and no significant differences were observed . This result indicates that the observed increase in surface roughness with increased vaporizer ...
Contents
Polynorbornene for Lowk Interconnection | 3 |
SILK Polymer Coating With LowDielectric Constant | 9 |
F During Oxygen Plasma Annealing | 19 |
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Common terms and phrases
adhesion aerogel annealing as-deposited atoms BCB film bond BPDA-PDA capacitance Chemat-B chemical cm¹ CMP process coating copolymers cured films curve decrease delamination density deposition rate device dielectric constant dielectric material diffusion e-beam cured effect electron Figure film stress film thickness films deposited fluorinated polyimide fluorine fluoropolymer FSG films FTEOS films FTIR gap fill glass transition temperature heating in-plane increase integrated circuits interface labile block layer low dielectric constant low-k measured mechanical metal lines modulus moisture Multilevel Interconnection norbornene optical out-of-plane oxide oxygen PA-N film parylene Parylene-N peak PECVD Phys planarization plasma plasma treatment polishing polyimide polymer polymerization precursor pressure Proc properties PTFE ratio reaction refractive index sample shows Si-F Si-O-Si silica silicon SiO2 SiOF films slurry spectra spin-coated spin-on structure substrate surface Teflon-AF temperature TEOS thermal cycles thermal stability thin films ULSI vapor wafer wet etch