Low-dielectric Constant Materials, Volume 476Materials Research Society, 1997 - Electric insulators and insulation |
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Page 35
Thermal stability data supports the idea that The bands at 1470 , 1600 , and 1850 cm " , the presence of fluorine during film deposition which change most noticeably , are associated lowers the degree of cross - linking , in that with ...
Thermal stability data supports the idea that The bands at 1470 , 1600 , and 1850 cm " , the presence of fluorine during film deposition which change most noticeably , are associated lowers the degree of cross - linking , in that with ...
Page 165
This indicates that NH4OH is better than HNO3 for PA - N polishing , which may be due to the lower oxidation nature of the slurry with NH4OH . Although the 0.06 um alumina was used in slurry - 4 , and 0.3 um alumina was used in slurry ...
This indicates that NH4OH is better than HNO3 for PA - N polishing , which may be due to the lower oxidation nature of the slurry with NH4OH . Although the 0.06 um alumina was used in slurry - 4 , and 0.3 um alumina was used in slurry ...
Page 283
At this point , the sidewall film likely has both lower fluorine content and lower stress than the top surface film . The lower fluorine concentration appears to compensate for the lower stress . The deposition rate on top surfaces ...
At this point , the sidewall film likely has both lower fluorine content and lower stress than the top surface film . The lower fluorine concentration appears to compensate for the lower stress . The deposition rate on top surfaces ...
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Contents
Polynorbornene for Lowk Interconnection | 3 |
High Thermal Stability for ULSI Interlayer Dielectric | 9 |
F During Oxygen Plasma Annealing | 19 |
Copyright | |
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addition adhesion analysis annealing applications atoms bond capacitance chamber chemical coating compared concentration copolymers cost cured curve cycle decrease density dependence deposited determined device dielectric constant diffusion DISCUSSION effect electrical electron energy etch etch rate experiments Figure flow fluorine formed function groups heating higher improved increase indicate integrated interconnect interface layer less lines loss low dielectric constant lower materials measured mechanical metal mode modulus moisture observed obtained occurs oxide oxygen PA-N peak performance plasma polishing polyimide polymer pressure Proc properties range ratio reaction reduced refractive index relative Research resistance respectively sample shown shows Si-F signal silicon SiO2 SiOF films solution spectra strength stress structure substrate surface Table Teflon temperature TEOS thermal thermal stability thickness thin films treatment wafer