Low-dielectric Constant Materials, Volume 476Materials Research Society, 1997 - Electric insulators and insulation |
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Results 1-3 of 57
Page 35
Thermal stability data supports the idea that the presence of fluorine during film
deposition lowers the degree of cross - linking ... The presence of fluorine as a
network - terminating end - group may inhibit cross - linking by its lower
dissociation ...
Thermal stability data supports the idea that the presence of fluorine during film
deposition lowers the degree of cross - linking ... The presence of fluorine as a
network - terminating end - group may inhibit cross - linking by its lower
dissociation ...
Page 165
This indicates that NH4OH is better than HNO3 for PA - N polishing , which may
be due to the lower oxidation nature of the slurry with NH4OH . Although the 0 .
06 um alumina was used in slurry - 4 , and 0 . 3 um alumina was used in slurry - 5
...
This indicates that NH4OH is better than HNO3 for PA - N polishing , which may
be due to the lower oxidation nature of the slurry with NH4OH . Although the 0 .
06 um alumina was used in slurry - 4 , and 0 . 3 um alumina was used in slurry - 5
...
Page 283
At this point , the sidewall film likely has both lower fluorine content and lower
stress than the top surface film . The lower fluorine concentration appears to
compensate for the lower stress . The deposition rate on top surfaces decreases
as ...
At this point , the sidewall film likely has both lower fluorine content and lower
stress than the top surface film . The lower fluorine concentration appears to
compensate for the lower stress . The deposition rate on top surfaces decreases
as ...
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Contents
SILK Polymer Coating With LowDielectric Constant | 9 |
F During Oxygen Plasma Annealing | 19 |
INTERFACES AND POROUS MATERIALS | 59 |
Copyright | |
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Common terms and phrases
addition adhesion analysis annealing applications atoms bond capacitance chamber chemical coating compared concentration copolymers cost cured curve cycle decrease density dependence deposited determined device dielectric constant diffusion DISCUSSION effect electrical electron energy etch etch rate experiments Figure flow fluorine formed function groups heating higher improved increase indicate integrated interconnect interface layer less lines loss low dielectric constant lower materials measured mechanical metal mode moisture observed obtained occurs oxide oxygen PA-N passivation peak performance plasma polishing polyimide polymer pressure Proc properties range ratio reaction reduced refractive index relative Research resistance respectively sample shown shows Si-F signal silicon SiO2 SiOF films spectra strength stress structure substrate surface Table Teflon temperature TEOS thermal thermal stability thickness thin films treatment wafer