Low-dielectric Constant Materials, Volume 476Materials Research Society, 1997 - Electric insulators and insulation |
From inside the book
Results 1-3 of 57
Page 35
... lower dissociation probability relative to hydrogen . A lower degree of cross - linking in the film increases the likelihood that a given collection of atoms is a trapped , volatile molecule . One method by which voids may be created is ...
... lower dissociation probability relative to hydrogen . A lower degree of cross - linking in the film increases the likelihood that a given collection of atoms is a trapped , volatile molecule . One method by which voids may be created is ...
Page 129
... lower dielectric constant offers reduced crosstalk , signal propagation delay , and dynamic power dissipation . One issue associated with polyimides is the anisotropy in dielectric constant , where the smaller out - of - plane ...
... lower dielectric constant offers reduced crosstalk , signal propagation delay , and dynamic power dissipation . One issue associated with polyimides is the anisotropy in dielectric constant , where the smaller out - of - plane ...
Page 283
... lower fluorine content and lower stress than the top surface film . The lower fluorine concentration appears to compensate for the lower stress . The deposition rate on top surfaces decreases as C2F6 flow increases , while the ...
... lower fluorine content and lower stress than the top surface film . The lower fluorine concentration appears to compensate for the lower stress . The deposition rate on top surfaces decreases as C2F6 flow increases , while the ...
Contents
Polynorbornene for Lowk Interconnection | 3 |
SILK Polymer Coating With LowDielectric Constant | 9 |
F During Oxygen Plasma Annealing | 19 |
Copyright | |
34 other sections not shown
Other editions - View all
Common terms and phrases
adhesion aerogel annealing as-deposited atoms BCB film bond BPDA-PDA capacitance Chemat-B chemical cm¹ CMP process coating copolymers cured films curve decrease delamination density deposition rate device dielectric constant dielectric material diffusion e-beam cured effect electron Figure film stress film thickness films deposited fluorinated polyimide fluorine fluoropolymer FSG films FTEOS films FTIR gap fill glass transition temperature heating in-plane increase integrated circuits interface labile block layer low dielectric constant low-k measured mechanical metal lines modulus moisture Multilevel Interconnection norbornene optical out-of-plane oxide oxygen PA-N film parylene Parylene-N peak PECVD Phys planarization plasma plasma treatment polishing polyimide polymer polymerization precursor pressure Proc properties PTFE ratio reaction refractive index sample shows Si-F Si-O-Si silica silicon SiO2 SiOF films slurry spectra spin-coated spin-on structure substrate surface Teflon-AF temperature TEOS thermal cycles thermal stability thin films ULSI vapor wafer wet etch