Low-dielectric Constant Materials, Volume 476Materials Research Society, 1997 - Electric insulators and insulation |
From inside the book
Results 1-3 of 6
Page xi
... Magnetic Ultrathin Films , Multilayers and Surfaces - 1997 , D.D. Chambliss , J.G. Tobin , D. Kubinski , K. Barmak , W.J.M. de Jonge , T. Katayama , A. Schuhl , P. Dederichs , 1997 , ISBN : 1-55899-379-7 Volume 476— Low - Dielectric ...
... Magnetic Ultrathin Films , Multilayers and Surfaces - 1997 , D.D. Chambliss , J.G. Tobin , D. Kubinski , K. Barmak , W.J.M. de Jonge , T. Katayama , A. Schuhl , P. Dederichs , 1997 , ISBN : 1-55899-379-7 Volume 476— Low - Dielectric ...
Page 20
... magnetic field . Source gases of С¿F , CF , and CH , were introduced into the chamber . The temperature of the substrates during deposition was typically kept at around 50 ° C . The helicon reactor was powered by a 13.56 MHz 3 kW power ...
... magnetic field . Source gases of С¿F , CF , and CH , were introduced into the chamber . The temperature of the substrates during deposition was typically kept at around 50 ° C . The helicon reactor was powered by a 13.56 MHz 3 kW power ...
Page 47
... magnetic field ( Fig . 3 ) . It is evident that MxP + chamber provides a wide process window in terms of etch rate , uniformity and selectivity . 5000 4500 4000 3500 3000 2500 ETCH RATE ( Å / min ) 2000 1500 1000 15 12 3 NON - UNIF ...
... magnetic field ( Fig . 3 ) . It is evident that MxP + chamber provides a wide process window in terms of etch rate , uniformity and selectivity . 5000 4500 4000 3500 3000 2500 ETCH RATE ( Å / min ) 2000 1500 1000 15 12 3 NON - UNIF ...
Contents
Polynorbornene for Lowk Interconnection | 3 |
SILK Polymer Coating With LowDielectric Constant | 9 |
F During Oxygen Plasma Annealing | 19 |
Copyright | |
34 other sections not shown
Other editions - View all
Common terms and phrases
adhesion aerogel annealing as-deposited atoms BCB film bond BPDA-PDA capacitance Chemat-B chemical cm¹ CMP process coating copolymers cured films curve decrease delamination density deposition rate device dielectric constant dielectric material diffusion e-beam cured effect electron Figure film stress film thickness films deposited fluorinated polyimide fluorine fluoropolymer FSG films FTEOS films FTIR gap fill glass transition temperature heating in-plane increase integrated circuits interface labile block layer low dielectric constant low-k measured mechanical metal lines modulus moisture Multilevel Interconnection norbornene optical out-of-plane oxide oxygen PA-N film parylene Parylene-N peak PECVD Phys planarization plasma plasma treatment polishing polyimide polymer polymerization precursor pressure Proc properties PTFE ratio reaction refractive index sample shows Si-F Si-O-Si silica silicon SiO2 SiOF films slurry spectra spin-coated spin-on structure substrate surface Teflon-AF temperature TEOS thermal cycles thermal stability thin films ULSI vapor wafer wet etch