Low-dielectric Constant Materials, Volume 476Materials Research Society, 1997 - Electric insulators and insulation |
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Page 130
... metal lines passivated by a thick dielectric ( Figure 1 ) . The lateral crosstalk capacitance between adjacent lines , Ccrosstalk , is the sum of one sidewall ( Cside ) and two fringe components ( Cbottom and Ctop ) : Ccrosstalk ...
... metal lines passivated by a thick dielectric ( Figure 1 ) . The lateral crosstalk capacitance between adjacent lines , Ccrosstalk , is the sum of one sidewall ( Cside ) and two fringe components ( Cbottom and Ctop ) : Ccrosstalk ...
Page 131
... metal to form the inlaid lines , the wafers were divided into three splits , respectively passivated by ( 1 ) air ... metal pads for wafer probing . Finally , all wafers were subjected to a forming gas anneal . The resulting inlaid metal ...
... metal to form the inlaid lines , the wafers were divided into three splits , respectively passivated by ( 1 ) air ... metal pads for wafer probing . Finally , all wafers were subjected to a forming gas anneal . The resulting inlaid metal ...
Page 290
... metal lines . We compared the amount of strain in the metal lines and found that they are equal . We also took AFM images of the surface of the metal lines at different applied strains and found that the amount of deformation and ...
... metal lines . We compared the amount of strain in the metal lines and found that they are equal . We also took AFM images of the surface of the metal lines at different applied strains and found that the amount of deformation and ...
Contents
Polynorbornene for Lowk Interconnection | 3 |
SILK Polymer Coating With LowDielectric Constant | 9 |
F During Oxygen Plasma Annealing | 19 |
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adhesion aerogel annealing as-deposited atoms BCB film bond BPDA-PDA capacitance Chemat-B chemical cm¹ CMP process coating copolymers cured films curve decrease delamination density deposition rate device dielectric constant dielectric material diffusion e-beam cured effect electron Figure film stress film thickness films deposited fluorinated polyimide fluorine fluoropolymer FSG films FTEOS films FTIR gap fill glass transition temperature heating in-plane increase integrated circuits interface labile block layer low dielectric constant low-k measured mechanical metal lines modulus moisture Multilevel Interconnection norbornene optical out-of-plane oxide oxygen PA-N film parylene Parylene-N peak PECVD Phys planarization plasma plasma treatment polishing polyimide polymer polymerization precursor pressure Proc properties PTFE ratio reaction refractive index sample shows Si-F Si-O-Si silica silicon SiO2 SiOF films slurry spectra spin-coated spin-on structure substrate surface Teflon-AF temperature TEOS thermal cycles thermal stability thin films ULSI vapor wafer wet etch