Low-dielectric Constant Materials, Volume 476Materials Research Society, 1997 - Electric insulators and insulation |
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Page 14
It is not unusual for the elastic modulus of polymers to be two orders of magnitude less than that of mineral dielectrics . On the other hand , the coefficient of thermal expansion of polymers can be as much as two orders of magnitude ...
It is not unusual for the elastic modulus of polymers to be two orders of magnitude less than that of mineral dielectrics . On the other hand , the coefficient of thermal expansion of polymers can be as much as two orders of magnitude ...
Page 15
The drop in modulus , and more importantly the increase in viscous flow , during process integration has led to a concern about the dimensional stability of polymer dielectrics at process temperatures near or above Tg . Also , the CTE's ...
The drop in modulus , and more importantly the increase in viscous flow , during process integration has led to a concern about the dimensional stability of polymer dielectrics at process temperatures near or above Tg . Also , the CTE's ...
Page 139
RESULTS AND DISCUSSION Bending Beam Stress Measurements The modulus and TEC of a TEOS film were measured using the bending beam system in order to test the sensitivity of the system for porous and brittle film applications .
RESULTS AND DISCUSSION Bending Beam Stress Measurements The modulus and TEC of a TEOS film were measured using the bending beam system in order to test the sensitivity of the system for porous and brittle film applications .
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Contents
Polynorbornene for Lowk Interconnection | 3 |
High Thermal Stability for ULSI Interlayer Dielectric | 9 |
F During Oxygen Plasma Annealing | 19 |
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addition adhesion analysis annealing applications atoms bond capacitance chamber chemical coating compared concentration copolymers cost cured curve cycle decrease density dependence deposited determined device dielectric constant diffusion DISCUSSION effect electrical electron energy etch etch rate experiments Figure flow fluorine formed function groups heating higher improved increase indicate integrated interconnect interface layer less lines loss low dielectric constant lower materials measured mechanical metal mode modulus moisture observed obtained occurs oxide oxygen PA-N peak performance plasma polishing polyimide polymer pressure Proc properties range ratio reaction reduced refractive index relative Research resistance respectively sample shown shows Si-F signal silicon SiO2 SiOF films solution spectra strength stress structure substrate surface Table Teflon temperature TEOS thermal thermal stability thickness thin films treatment wafer