Low-dielectric Constant Materials, Volume 476Materials Research Society, 1997 - Electric insulators and insulation |
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Page 16
The coating was previously cured at 450 ° C . Moisture Uptake Figure 7 shows the mass uptake of 12 um thick films of SILK during relative humidity swings from dry to the indicated humidity levels . The maximum moisture uptake at 80 % RH ...
The coating was previously cured at 450 ° C . Moisture Uptake Figure 7 shows the mass uptake of 12 um thick films of SILK during relative humidity swings from dry to the indicated humidity levels . The maximum moisture uptake at 80 % RH ...
Page 99
TEMPERATURE AND MOISTURE DEPENDENCE OF DIELECTRIC CONSTANT FOR BULK SILICA AEROGELS * L.W. HRUBESH and S. R. Buckley , Chemistry & Materials Science Department , Lawrence Livermore National Laboratory , Livermore , CA 94550 hrubesh1 ...
TEMPERATURE AND MOISTURE DEPENDENCE OF DIELECTRIC CONSTANT FOR BULK SILICA AEROGELS * L.W. HRUBESH and S. R. Buckley , Chemistry & Materials Science Department , Lawrence Livermore National Laboratory , Livermore , CA 94550 hrubesh1 ...
Page 108
The significant decrease in the dielectric constant after baking suggests moisture is desorbed from the film . Moisture would also explain the subsequent increase in the dielectric constant , as water is adsorbed onto the film with time ...
The significant decrease in the dielectric constant after baking suggests moisture is desorbed from the film . Moisture would also explain the subsequent increase in the dielectric constant , as water is adsorbed onto the film with time ...
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Contents
Polynorbornene for Lowk Interconnection | 3 |
High Thermal Stability for ULSI Interlayer Dielectric | 9 |
F During Oxygen Plasma Annealing | 19 |
Copyright | |
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addition adhesion analysis annealing applications atoms bond capacitance chamber chemical coating compared concentration copolymers cost cured curve cycle decrease density dependence deposited determined device dielectric constant diffusion DISCUSSION effect electrical electron energy etch etch rate experiments Figure flow fluorine formed function groups heating higher improved increase indicate integrated interconnect interface layer less lines loss low dielectric constant lower materials measured mechanical metal mode modulus moisture observed obtained occurs oxide oxygen PA-N peak performance plasma polishing polyimide polymer pressure Proc properties range ratio reaction reduced refractive index relative Research resistance respectively sample shown shows Si-F signal silicon SiO2 SiOF films solution spectra strength stress structure substrate surface Table Teflon temperature TEOS thermal thermal stability thickness thin films treatment wafer