Low-dielectric Constant Materials, Volume 476Materials Research Society, 1997 - Electric insulators and insulation |
From inside the book
Results 1-3 of 45
Page 96
To obtain a measure of the optical anisotropy of the thin films , their in - plane and out - of- plane refractive ... obtained by applying the Maxwell equation € ≈ ( n ) 2 and correcting for frequency dispersions ( Ae +0.3 ) . 15 ...
To obtain a measure of the optical anisotropy of the thin films , their in - plane and out - of- plane refractive ... obtained by applying the Maxwell equation € ≈ ( n ) 2 and correcting for frequency dispersions ( Ae +0.3 ) . 15 ...
Page 188
... obtained from C2F6-20 % H2 . is coincident with Teflon ( 18 dynes / cm ) , while for other mixtures quite different values are obtained . Figure 4 shows that the adhesion of these films on aluminium substrates is fairly good . MPa 3 2 1 ...
... obtained from C2F6-20 % H2 . is coincident with Teflon ( 18 dynes / cm ) , while for other mixtures quite different values are obtained . Figure 4 shows that the adhesion of these films on aluminium substrates is fairly good . MPa 3 2 1 ...
Page 239
... obtained using an inorganic gaseous dopant source ( SIF ) and an organic liquid dopant source ( TEFS ) are described . The stability of fluorine in these films is strongly dependent on process conditions . The limit of stability for the ...
... obtained using an inorganic gaseous dopant source ( SIF ) and an organic liquid dopant source ( TEFS ) are described . The stability of fluorine in these films is strongly dependent on process conditions . The limit of stability for the ...
Contents
Polynorbornene for Lowk Interconnection | 3 |
SILK Polymer Coating With LowDielectric Constant | 9 |
F During Oxygen Plasma Annealing | 19 |
Copyright | |
34 other sections not shown
Other editions - View all
Common terms and phrases
adhesion aerogel annealing as-deposited atoms BCB film bond BPDA-PDA capacitance Chemat-B chemical cm¹ CMP process coating copolymers cured films curve decrease delamination density deposition rate device dielectric constant dielectric material diffusion e-beam cured effect electron Figure film stress film thickness films deposited fluorinated polyimide fluorine fluoropolymer FSG films FTEOS films FTIR gap fill glass transition temperature heating in-plane increase integrated circuits interface labile block layer low dielectric constant low-k measured mechanical metal lines modulus moisture Multilevel Interconnection norbornene optical out-of-plane oxide oxygen PA-N film parylene Parylene-N peak PECVD Phys planarization plasma plasma treatment polishing polyimide polymer polymerization precursor pressure Proc properties PTFE ratio reaction refractive index sample shows Si-F Si-O-Si silica silicon SiO2 SiOF films slurry spectra spin-coated spin-on structure substrate surface Teflon-AF temperature TEOS thermal cycles thermal stability thin films ULSI vapor wafer wet etch