Low-dielectric Constant Materials, Volume 476Materials Research Society, 1997 - Electric insulators and insulation |
From inside the book
Results 1-3 of 45
Page 96
To obtain a measure of the optical anisotropy of the thin films , their in - plane and
out - ofplane refractive indices were measured using a commercially available
Metricon Prism Coupler . In addition to obtaining an accurate measurement of the
...
To obtain a measure of the optical anisotropy of the thin films , their in - plane and
out - ofplane refractive indices were measured using a commercially available
Metricon Prism Coupler . In addition to obtaining an accurate measurement of the
...
Page 188
The material depicted in figure 1 can be obtained in plasma reactors ( typically
parallel plate reactors ) without particular precautions , i . e . pressures between
100 mtorr and a few torrs , power input in the range of tens to hundreds of watts ...
The material depicted in figure 1 can be obtained in plasma reactors ( typically
parallel plate reactors ) without particular precautions , i . e . pressures between
100 mtorr and a few torrs , power input in the range of tens to hundreds of watts ...
Page 239
ABSTRACT The fluorine doped TEOS films obtained using an inorganic gaseous
dopant source ( SiFa ) and an organic liquid dopant source ( TEFS ) are
described . The stability of fluorine in these films is strongly dependent on
process ...
ABSTRACT The fluorine doped TEOS films obtained using an inorganic gaseous
dopant source ( SiFa ) and an organic liquid dopant source ( TEFS ) are
described . The stability of fluorine in these films is strongly dependent on
process ...
What people are saying - Write a review
We haven't found any reviews in the usual places.
Contents
SILK Polymer Coating With LowDielectric Constant | 9 |
F During Oxygen Plasma Annealing | 19 |
INTERFACES AND POROUS MATERIALS | 59 |
Copyright | |
24 other sections not shown
Other editions - View all
Common terms and phrases
addition adhesion analysis annealing applications atoms bond capacitance chamber chemical coating compared concentration copolymers cost cured curve cycle decrease density dependence deposited determined device dielectric constant diffusion DISCUSSION effect electrical electron energy etch etch rate experiments Figure flow fluorine formed function groups heating higher improved increase indicate integrated interconnect interface layer less lines loss low dielectric constant lower materials measured mechanical metal mode moisture observed obtained occurs oxide oxygen PA-N passivation peak performance plasma polishing polyimide polymer pressure Proc properties range ratio reaction reduced refractive index relative Research resistance respectively sample shown shows Si-F signal silicon SiO2 SiOF films spectra strength stress structure substrate surface Table Teflon temperature TEOS thermal thermal stability thickness thin films treatment wafer