Low-dielectric Constant Materials, Volume 476Materials Research Society, 1997 - Electric insulators and insulation |
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Page 63
For this reason , sample temperatures reported here are perhaps slightly higher
than those actually occurring at the sample ... Previous experience indicates that
decomposition of the Cu diketonate precursors occurs within the dosing tube .
For this reason , sample temperatures reported here are perhaps slightly higher
than those actually occurring at the sample ... Previous experience indicates that
decomposition of the Cu diketonate precursors occurs within the dosing tube .
Page 227
A similar trend is observed in the process PC film , but a larger increase than in
the control film occurs after the 60 min ... of - plane deformations at 543 and 823
cm " , respectively , are very sensitive to changes in morphology that occur during
...
A similar trend is observed in the process PC film , but a larger increase than in
the control film occurs after the 60 min ... of - plane deformations at 543 and 823
cm " , respectively , are very sensitive to changes in morphology that occur during
...
Page 230
An abrupt increase in the stress occurs at ~ 295 °C in the heating curve , and an
abrupt stress decrease occurs in the cooling curve at ~ 260 °C . These stress
inflections are likely due to the B1 - B2 phase transition because they appear at ...
An abrupt increase in the stress occurs at ~ 295 °C in the heating curve , and an
abrupt stress decrease occurs in the cooling curve at ~ 260 °C . These stress
inflections are likely due to the B1 - B2 phase transition because they appear at ...
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Contents
SILK Polymer Coating With LowDielectric Constant | 9 |
F During Oxygen Plasma Annealing | 19 |
INTERFACES AND POROUS MATERIALS | 59 |
Copyright | |
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addition adhesion analysis annealing applications atoms bond capacitance chamber chemical coating compared concentration copolymers cost cured curve cycle decrease density dependence deposited determined device dielectric constant diffusion DISCUSSION effect electrical electron energy etch etch rate experiments Figure flow fluorine formed function groups heating higher improved increase indicate integrated interconnect interface layer less lines loss low dielectric constant lower materials measured mechanical metal mode moisture observed obtained occurs oxide oxygen PA-N passivation peak performance plasma polishing polyimide polymer pressure Proc properties range ratio reaction reduced refractive index relative Research resistance respectively sample shown shows Si-F signal silicon SiO2 SiOF films spectra strength stress structure substrate surface Table Teflon temperature TEOS thermal thermal stability thickness thin films treatment wafer