Low-Dielectric Constant Materials III:C. Case, T. Kikkawa, P. Kohl, W. W. Lee Continuing improvement of integrated circuits (ICs) critically depends on the use of nonconventional materials. Interconnect delay is already the most severe limiting factor in most advanced IC. This delay can be minimized by reducing the interconnect capacitance, which is determined by a combination of process architecture and materials. While a broad range of candidate materials is being explored for IC application, there is no clear consensus on what material will be used to replace SiO2. Process architectures are also unsettled, with various efforts directed to either evolving present-day technology or switching to a damascene metal approach. Yet these processes may not be scaleable beyond the 0.15 µm generation of IC technology. This book brings together experts in the field of low-k dielectrics to focus on the challenges ahead. Topics include: organic and inorganic dielectrics; interfaces and porous materials; measurement and characterization; vapor-deposited materials; fluorinated oxides and polyimides. |
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Page 22
A sample of polished wafer by CMP was annealed in oxygen plasma ambient at
150°C. Figure 3(c) shows the optical view after oxygen plasma annealing at 150°
C. Adhesion of the top SiO2 was drastically degraded by this process. Figure 4 ...
A sample of polished wafer by CMP was annealed in oxygen plasma ambient at
150°C. Figure 3(c) shows the optical view after oxygen plasma annealing at 150°
C. Adhesion of the top SiO2 was drastically degraded by this process. Figure 4 ...
Page 263
After annealing, the wafers were inspected under an optical microscope, and
electrically tested again. 3. Results and Discussion 7.0X1020 6.0X1021 5.0X102'
4.0X1020 3.0X1O20 2.0X1020 l.OxlO20 0.04 0.06 0.08 Depth (nm) 0.10 Fig.
After annealing, the wafers were inspected under an optical microscope, and
electrically tested again. 3. Results and Discussion 7.0X1020 6.0X1021 5.0X102'
4.0X1020 3.0X1O20 2.0X1020 l.OxlO20 0.04 0.06 0.08 Depth (nm) 0.10 Fig.
Page 265
Figure 7 is an optical microscope top view of the poly-silicon/TiSi2 pads in one of
the wafers in Experiment 1. As discussed previously, F atoms may diffuse through
the inter-layer dielectric (ILD) stack and react with TiSi2, causing TiSi2 film ...
Figure 7 is an optical microscope top view of the poly-silicon/TiSi2 pads in one of
the wafers in Experiment 1. As discussed previously, F atoms may diffuse through
the inter-layer dielectric (ILD) stack and react with TiSi2, causing TiSi2 film ...
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Contents
Polynorbornene for Lowk Interconnection | 3 |
SiLK Polymer Coating With LowDielectric Constant | 9 |
F During Oxygen Plasma Annealing | 19 |
Copyright | |
33 other sections not shown
Other editions - View all
Low-Dielectric Constant Materials II: H. Treichel,A. C. Jones,A. Lagendijk,K. Uram Snippet view - 1997 |
Common terms and phrases
1997 Materials Research adhesion aerogel annealing as-deposited atoms BCB film bond BPDA-PDA capacitance Chemat-B chemical CMP process coating copolymers cured films curve decrease delamination density device dielectric constant dielectric material diffusion e-beam cured electron Figure film thickness films deposited fluorinated polyimide fluorine fluoropolymer FSG films FTEOS films FTIR gap fill glass transition temperature heating in-plane increase integrated circuits interface labile block layer low dielectric constant low-k Materials Research Society measured mechanical metal lines modulus moisture Multilevel Interconnection norbornene optical out-of-plane oxide oxygen PA-N film parylene Parylene-N passivation peak PECVD permittivity planarization plasma plasma treatment polishing polyimide polymer polymerization precursor pressure Proc properties PTFE ratio reaction refractive index sample shows Si-F Si-O-Si SiF4 silica silicon SiO2 SiOF films slurry spectra spin-coated spin-on structure substrate surface Symp Teflon-AF TEOS thermal cycles thermal stability thin films ULSI vapor wafer wet etch
Bibliographic information
| Title | Low-Dielectric Constant Materials III: Materials Research Society Symposia Proceedings, Materials Research Society Symposia Proceedings |
| Editors | C. Case, T. Kikkawa, P. Kohl, W. W. Lee |
| Publisher | Materials Research Society, 1998 |
| Original from | the University of Michigan |
| Digitized | 10 Dec 2007 |
| Length | 300 pages |
| Subjects | › Technology & Engineering / Materials Science Technology & Engineering / Superconductors & Superconductivity |
| Export Citation | BiBTeX EndNote RefMan |