Low-dielectric Constant Materials, Volume 476Materials Research Society, 1997 - Electric insulators and insulation |
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Page 19
Adhesion of a - C : F during oxygen plasma annealing Y. Matsubara , K. Endo * , T. Tatsumi * , and T. Horiuchi ULSI Device Development Labs . , * Microelectronics Res . Labs . NEC Corporation 1120 , Shimokuzawa , Sagamihara , Kanagawa ...
Adhesion of a - C : F during oxygen plasma annealing Y. Matsubara , K. Endo * , T. Tatsumi * , and T. Horiuchi ULSI Device Development Labs . , * Microelectronics Res . Labs . NEC Corporation 1120 , Shimokuzawa , Sagamihara , Kanagawa ...
Page 22
Therefore , silicon oxide deposition using a high bias - added process was indispensable to achieve good protection from oxygen plasma ambient in order to form void - free SiO2 . 2 ) Decomposition failure mode of Sio , capped a - C : F ...
Therefore , silicon oxide deposition using a high bias - added process was indispensable to achieve good protection from oxygen plasma ambient in order to form void - free SiO2 . 2 ) Decomposition failure mode of Sio , capped a - C : F ...
Page 165
Slurry - 4 , slurry - 5 , and slurry - 7 do not affect the surface structure for PA - N films , while slurry - 3 , slurry - 6 , and slurry - 8 increase the oxygen content ( which is not suitable for subsequent PA - N processing ) .
Slurry - 4 , slurry - 5 , and slurry - 7 do not affect the surface structure for PA - N films , while slurry - 3 , slurry - 6 , and slurry - 8 increase the oxygen content ( which is not suitable for subsequent PA - N processing ) .
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Contents
Polynorbornene for Lowk Interconnection | 3 |
High Thermal Stability for ULSI Interlayer Dielectric | 9 |
F During Oxygen Plasma Annealing | 19 |
Copyright | |
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addition adhesion analysis annealing applications atoms bond capacitance chamber chemical coating compared concentration copolymers cost cured curve cycle decrease density dependence deposited determined device dielectric constant diffusion DISCUSSION effect electrical electron energy etch etch rate experiments Figure flow fluorine formed function groups heating higher improved increase indicate integrated interconnect interface layer less lines loss low dielectric constant lower materials measured mechanical metal mode modulus moisture observed obtained occurs oxide oxygen PA-N peak performance plasma polishing polyimide polymer pressure Proc properties range ratio reaction reduced refractive index relative Research resistance respectively sample shown shows Si-F signal silicon SiO2 SiOF films solution spectra strength stress structure substrate surface Table Teflon temperature TEOS thermal thermal stability thickness thin films treatment wafer