Low-dielectric Constant Materials, Volume 476Materials Research Society, 1997 - Electric insulators and insulation |
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Page 130
THEORY Consider the cross - section of interdigitated inlaid metal lines
passivated by a thick dielectric ( Figure 1 ) . ... Provided the passivation dielectric
is sufficiently thick to contain essentially all the electric field lines fringing above
the inlaid ...
THEORY Consider the cross - section of interdigitated inlaid metal lines
passivated by a thick dielectric ( Figure 1 ) . ... Provided the passivation dielectric
is sufficiently thick to contain essentially all the electric field lines fringing above
the inlaid ...
Page 132
Confirmation of extraction technique by capacitance simulations . Confirmation
by MEDICITM Simulations The ( K passivation ) extraction technique was
confirmed by MEDICITM interconnect capacitance simulations [ 8 ] where
Ccrosstalk was ...
Confirmation of extraction technique by capacitance simulations . Confirmation
by MEDICITM Simulations The ( K passivation ) extraction technique was
confirmed by MEDICITM interconnect capacitance simulations [ 8 ] where
Ccrosstalk was ...
Page 133
16 O No passivation O TEOS passivation o Polyimide passivation air 1 . 5 TEOS .
nitride FPI - 136M fluorinated polyimide 00 000 0 . 14 polyimide + 0 . 18um nitride
Ccrosstalk ( fF / um ) polyimide serp comb y ( um ) TEOS unpassivated n - Si 0 ...
16 O No passivation O TEOS passivation o Polyimide passivation air 1 . 5 TEOS .
nitride FPI - 136M fluorinated polyimide 00 000 0 . 14 polyimide + 0 . 18um nitride
Ccrosstalk ( fF / um ) polyimide serp comb y ( um ) TEOS unpassivated n - Si 0 ...
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Contents
SILK Polymer Coating With LowDielectric Constant | 9 |
F During Oxygen Plasma Annealing | 19 |
INTERFACES AND POROUS MATERIALS | 59 |
Copyright | |
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addition adhesion analysis annealing applications atoms bond capacitance chamber chemical coating compared concentration copolymers cost cured curve cycle decrease density dependence deposited determined device dielectric constant diffusion DISCUSSION effect electrical electron energy etch etch rate experiments Figure flow fluorine formed function groups heating higher improved increase indicate integrated interconnect interface layer less lines loss low dielectric constant lower materials measured mechanical metal mode moisture observed obtained occurs oxide oxygen PA-N passivation peak performance plasma polishing polyimide polymer pressure Proc properties range ratio reaction reduced refractive index relative Research resistance respectively sample shown shows Si-F signal silicon SiO2 SiOF films spectra strength stress structure substrate surface Table Teflon temperature TEOS thermal thermal stability thickness thin films treatment wafer