Low-dielectric Constant Materials, Volume 476Materials Research Society, 1997 - Electric insulators and insulation |
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Page 167
It is clear that with the increase in polishing time , the single C - C peak at 285 eV for as - spin - on film changes into two peaks . One peak is still located at 285 eV ( which also corresponds to the C - C bond ) and another is ...
It is clear that with the increase in polishing time , the single C - C peak at 285 eV for as - spin - on film changes into two peaks . One peak is still located at 285 eV ( which also corresponds to the C - C bond ) and another is ...
Page 227
The a peak does not grow during the 250 ° C anneal as it did in the 200 ° C anneal , but a large ß peak grows in both films as expected . The behavior of the a peak at various anneal times is interesting . The peak first decreases and ...
The a peak does not grow during the 250 ° C anneal as it did in the 200 ° C anneal , but a large ß peak grows in both films as expected . The behavior of the a peak at various anneal times is interesting . The peak first decreases and ...
Page 242
Figure 4 shows the effect of increasing F concentration on the Si - F peak intensity , as obtained by FTIR for SiFa doped FTEOS films . With increasing Si - F concentration from 1 to 5 % , the Si - F peak broadens and becomes intense ...
Figure 4 shows the effect of increasing F concentration on the Si - F peak intensity , as obtained by FTIR for SiFa doped FTEOS films . With increasing Si - F concentration from 1 to 5 % , the Si - F peak broadens and becomes intense ...
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Contents
Polynorbornene for Lowk Interconnection | 3 |
High Thermal Stability for ULSI Interlayer Dielectric | 9 |
F During Oxygen Plasma Annealing | 19 |
Copyright | |
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addition adhesion analysis annealing applications atoms bond capacitance chamber chemical coating compared concentration copolymers cost cured curve cycle decrease density dependence deposited determined device dielectric constant diffusion DISCUSSION effect electrical electron energy etch etch rate experiments Figure flow fluorine formed function groups heating higher improved increase indicate integrated interconnect interface layer less lines loss low dielectric constant lower materials measured mechanical metal mode modulus moisture observed obtained occurs oxide oxygen PA-N peak performance plasma polishing polyimide polymer pressure Proc properties range ratio reaction reduced refractive index relative Research resistance respectively sample shown shows Si-F signal silicon SiO2 SiOF films solution spectra strength stress structure substrate surface Table Teflon temperature TEOS thermal thermal stability thickness thin films treatment wafer