Low-dielectric Constant Materials, Volume 476Materials Research Society, 1997 - Electric insulators and insulation |
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Results 1-3 of 28
Page 167
It is clear that with the increase in polishing time , the single C - C peak at 285 eV
for as - spin - on film changes into two peaks . One peak is still located at 285 eV (
which also corresponds to the C - C bond ) and another is located at about 286 ...
It is clear that with the increase in polishing time , the single C - C peak at 285 eV
for as - spin - on film changes into two peaks . One peak is still located at 285 eV (
which also corresponds to the C - C bond ) and another is located at about 286 ...
Page 227
The a peak does not grow during the 250 °C anneal as it did in the 200 °C
anneal , but a large B peak grows in both films as expected . The behavior of the
a peak at various anneal times is interesting . The peak first decreases and
narrows ...
The a peak does not grow during the 250 °C anneal as it did in the 200 °C
anneal , but a large B peak grows in both films as expected . The behavior of the
a peak at various anneal times is interesting . The peak first decreases and
narrows ...
Page 242
The lack of a decrease in K with increasing Si - F concentration is an indication of
the instability of these films . Figure 4 shows the effect of increasing F
concentration on the Si - F peak intensity , as obtained by FTIR for Sif , doped
FTEOS films .
The lack of a decrease in K with increasing Si - F concentration is an indication of
the instability of these films . Figure 4 shows the effect of increasing F
concentration on the Si - F peak intensity , as obtained by FTIR for Sif , doped
FTEOS films .
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Contents
SILK Polymer Coating With LowDielectric Constant | 9 |
F During Oxygen Plasma Annealing | 19 |
INTERFACES AND POROUS MATERIALS | 59 |
Copyright | |
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Common terms and phrases
addition adhesion analysis annealing applications atoms bond capacitance chamber chemical coating compared concentration copolymers cost cured curve cycle decrease density dependence deposited determined device dielectric constant diffusion DISCUSSION effect electrical electron energy etch etch rate experiments Figure flow fluorine formed function groups heating higher improved increase indicate integrated interconnect interface layer less lines loss low dielectric constant lower materials measured mechanical metal mode moisture observed obtained occurs oxide oxygen PA-N passivation peak performance plasma polishing polyimide polymer pressure Proc properties range ratio reaction reduced refractive index relative Research resistance respectively sample shown shows Si-F signal silicon SiO2 SiOF films spectra strength stress structure substrate surface Table Teflon temperature TEOS thermal thermal stability thickness thin films treatment wafer
Bibliographic information
| Title | Low-dielectric Constant Materials, Volume 476 Volume 381; Volume 443; Volume 476; Volume 511; Volume 565 of Materials Research Society symposia proceedings |
| Publisher | Materials Research Society, 1997 |
| Original from | the University of Michigan |
| Digitized | 10 Dec 2007 |
| ISBN | 1558993800, 9781558993808 |
| Export Citation | BiBTeX EndNote RefMan |