Low-dielectric Constant Materials, Volume 476Materials Research Society, 1997 - Electric insulators and insulation |
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Results 1-3 of 28
Page 167
... peak at 285 eV for as - spin - on film changes into two peaks . One peak is still located at 285 eV ( which also corresponds to the C - C bond ) and another is located at about 286.3 eV , which has a positive chemical shift of ...
... peak at 285 eV for as - spin - on film changes into two peaks . One peak is still located at 285 eV ( which also corresponds to the C - C bond ) and another is located at about 286.3 eV , which has a positive chemical shift of ...
Page 227
... peak grows in both films as expected . The behavior of the a peak at various anneal times is interesting . The peak first decreases and narrows after 15 and 30 min . anneals , then it increases after 60 minutes . A similar trend is ...
... peak grows in both films as expected . The behavior of the a peak at various anneal times is interesting . The peak first decreases and narrows after 15 and 30 min . anneals , then it increases after 60 minutes . A similar trend is ...
Page 242
... peak intensity , as obtained by FTIR for SiF , doped FTEOS films . With increasing Si - F concentration from 1 to 5 % , the Si - F peak broadens and becomes intense , and an additional absorption peak is seen at wave number 980cm . This ...
... peak intensity , as obtained by FTIR for SiF , doped FTEOS films . With increasing Si - F concentration from 1 to 5 % , the Si - F peak broadens and becomes intense , and an additional absorption peak is seen at wave number 980cm . This ...
Contents
Polynorbornene for Lowk Interconnection | 3 |
SILK Polymer Coating With LowDielectric Constant | 9 |
F During Oxygen Plasma Annealing | 19 |
Copyright | |
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Common terms and phrases
adhesion aerogel annealing as-deposited atoms BCB film bond BPDA-PDA capacitance Chemat-B chemical cm¹ CMP process coating copolymers cured films curve decrease delamination density deposition rate device dielectric constant dielectric material diffusion e-beam cured effect electron Figure film stress film thickness films deposited fluorinated polyimide fluorine fluoropolymer FSG films FTEOS films FTIR gap fill glass transition temperature heating in-plane increase integrated circuits interface labile block layer low dielectric constant low-k measured mechanical metal lines modulus moisture Multilevel Interconnection norbornene optical out-of-plane oxide oxygen PA-N film parylene Parylene-N peak PECVD Phys planarization plasma plasma treatment polishing polyimide polymer polymerization precursor pressure Proc properties PTFE ratio reaction refractive index sample shows Si-F Si-O-Si silica silicon SiO2 SiOF films slurry spectra spin-coated spin-on structure substrate surface Teflon-AF temperature TEOS thermal cycles thermal stability thin films ULSI vapor wafer wet etch