Low-dielectric Constant Materials, Volume 476Materials Research Society, 1997 - Electric insulators and insulation |
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Page 3
Low dielectric constant interlevel dielectrics have already been identified as being critical to the realization of high performance integrated circuits in the SIA Roadmap . Thus , there exists a need in the microelectronics industry ...
Low dielectric constant interlevel dielectrics have already been identified as being critical to the realization of high performance integrated circuits in the SIA Roadmap . Thus , there exists a need in the microelectronics industry ...
Page 45
Excellent chamber performance and wide process window were demonstrated . Etch selectivities between various SOG and liner films are tunable in a wide range allowing optimization of IMD planarization . INTRODUCTION In semiconductor ...
Excellent chamber performance and wide process window were demonstrated . Etch selectivities between various SOG and liner films are tunable in a wide range allowing optimization of IMD planarization . INTRODUCTION In semiconductor ...
Page 197
Additionally , a reduction in the permittivity would be beneficial from both device performance and extendibility points - of - view . We have synthesized various Parylene - N - based copolymers with improved adhesion , thermal ...
Additionally , a reduction in the permittivity would be beneficial from both device performance and extendibility points - of - view . We have synthesized various Parylene - N - based copolymers with improved adhesion , thermal ...
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Contents
Polynorbornene for Lowk Interconnection | 3 |
High Thermal Stability for ULSI Interlayer Dielectric | 9 |
F During Oxygen Plasma Annealing | 19 |
Copyright | |
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addition adhesion analysis annealing applications atoms bond capacitance chamber chemical coating compared concentration copolymers cost cured curve cycle decrease density dependence deposited determined device dielectric constant diffusion DISCUSSION effect electrical electron energy etch etch rate experiments Figure flow fluorine formed function groups heating higher improved increase indicate integrated interconnect interface layer less lines loss low dielectric constant lower materials measured mechanical metal mode modulus moisture observed obtained occurs oxide oxygen PA-N peak performance plasma polishing polyimide polymer pressure Proc properties range ratio reaction reduced refractive index relative Research resistance respectively sample shown shows Si-F signal silicon SiO2 SiOF films solution spectra strength stress structure substrate surface Table Teflon temperature TEOS thermal thermal stability thickness thin films treatment wafer