Low-dielectric Constant Materials, Volume 476Materials Research Society, 1997 - Electric insulators and insulation |
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Page 56
... Photoresists and related chemicals are not needed , and no complicate etching process either . The washout Chemat - B solutions can be recycled for further applications . Table 2 shows the cost prediction for a 8 " wafer with .25 mm ...
... Photoresists and related chemicals are not needed , and no complicate etching process either . The washout Chemat - B solutions can be recycled for further applications . Table 2 shows the cost prediction for a 8 " wafer with .25 mm ...
Page 115
... photoresist . RESULTS & DISCUSSION I. Gap Fill Optimization DI The first aspect of fluorinated polyimide optimization for subtractively - etched Al interconnects is improvement in gap filling behavior . Figure 1 illustrates the gap fill ...
... photoresist . RESULTS & DISCUSSION I. Gap Fill Optimization DI The first aspect of fluorinated polyimide optimization for subtractively - etched Al interconnects is improvement in gap filling behavior . Figure 1 illustrates the gap fill ...
Page 121
... photoresist residues , and its relatively low T , ( about 270 ° C ) . A glass transition temperature higher than 400 ° C is one of the prerequisites for interlevel dielectric materials . g 121 Curing of dielectric films by large area ...
... photoresist residues , and its relatively low T , ( about 270 ° C ) . A glass transition temperature higher than 400 ° C is one of the prerequisites for interlevel dielectric materials . g 121 Curing of dielectric films by large area ...
Contents
Polynorbornene for Lowk Interconnection | 3 |
SILK Polymer Coating With LowDielectric Constant | 9 |
F During Oxygen Plasma Annealing | 19 |
Copyright | |
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adhesion aerogel annealing as-deposited atoms BCB film bond BPDA-PDA capacitance Chemat-B chemical cm¹ CMP process coating copolymers cured films curve decrease delamination density deposition rate device dielectric constant dielectric material diffusion e-beam cured effect electron Figure film stress film thickness films deposited fluorinated polyimide fluorine fluoropolymer FSG films FTEOS films FTIR gap fill glass transition temperature heating in-plane increase integrated circuits interface labile block layer low dielectric constant low-k measured mechanical metal lines modulus moisture Multilevel Interconnection norbornene optical out-of-plane oxide oxygen PA-N film parylene Parylene-N peak PECVD Phys planarization plasma plasma treatment polishing polyimide polymer polymerization precursor pressure Proc properties PTFE ratio reaction refractive index sample shows Si-F Si-O-Si silica silicon SiO2 SiOF films slurry spectra spin-coated spin-on structure substrate surface Teflon-AF temperature TEOS thermal cycles thermal stability thin films ULSI vapor wafer wet etch