Low-dielectric Constant Materials, Volume 476Materials Research Society, 1997 - Electric insulators and insulation |
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Page 19
... plasma . This study describes adhesion failure mechanisms for the sandwiched fluorinated amorphous carbon film ( a - C : F ) structure during oxygen plasma annealing . We have found 3 failure modes : 1 ) capping SiO2 layer peels off , 2 ...
... plasma . This study describes adhesion failure mechanisms for the sandwiched fluorinated amorphous carbon film ( a - C : F ) structure during oxygen plasma annealing . We have found 3 failure modes : 1 ) capping SiO2 layer peels off , 2 ...
Page 20
... plasma annealing in order to attain a new low - k ILD process with global planarization and high oxygen plasma resistance . EXPERIMENTAL 4 The low - k multidielectric ILD was deposited on aluminum metal lines ( metal 1 ) at a thickness ...
... plasma annealing in order to attain a new low - k ILD process with global planarization and high oxygen plasma resistance . EXPERIMENTAL 4 The low - k multidielectric ILD was deposited on aluminum metal lines ( metal 1 ) at a thickness ...
Page 293
... plasma treated SiOF film is 5.3 A. On the other hand , as the plasma treatment time increases to 10 min . , the surface roughness of SiOF film increases to 34.3 Å . These results might be due to the etching effect by the post plasma ...
... plasma treated SiOF film is 5.3 A. On the other hand , as the plasma treatment time increases to 10 min . , the surface roughness of SiOF film increases to 34.3 Å . These results might be due to the etching effect by the post plasma ...
Contents
Polynorbornene for Lowk Interconnection | 3 |
SILK Polymer Coating With LowDielectric Constant | 9 |
F During Oxygen Plasma Annealing | 19 |
Copyright | |
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adhesion aerogel annealing as-deposited atoms BCB film bond BPDA-PDA capacitance Chemat-B chemical cm¹ CMP process coating copolymers cured films curve decrease delamination density deposition rate device dielectric constant dielectric material diffusion e-beam cured effect electron Figure film stress film thickness films deposited fluorinated polyimide fluorine fluoropolymer FSG films FTEOS films FTIR gap fill glass transition temperature heating in-plane increase integrated circuits interface labile block layer low dielectric constant low-k measured mechanical metal lines modulus moisture Multilevel Interconnection norbornene optical out-of-plane oxide oxygen PA-N film parylene Parylene-N peak PECVD Phys planarization plasma plasma treatment polishing polyimide polymer polymerization precursor pressure Proc properties PTFE ratio reaction refractive index sample shows Si-F Si-O-Si silica silicon SiO2 SiOF films slurry spectra spin-coated spin-on structure substrate surface Teflon-AF temperature TEOS thermal cycles thermal stability thin films ULSI vapor wafer wet etch