Low-dielectric Constant Materials, Volume 476Materials Research Society, 1997 - Electric insulators and insulation |
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Page 155
LOW - K DIELECTRIC MATERIAL CHEMICAL MECHANICAL POLISHING
PROCESS MONITORING USING ACOUSTIC EMISSION JIANSHE TANG ,
CARSTEN UNGER , YONGSIK MOON , DAVID DORNFELD Department of
Mechanical ...
LOW - K DIELECTRIC MATERIAL CHEMICAL MECHANICAL POLISHING
PROCESS MONITORING USING ACOUSTIC EMISSION JIANSHE TANG ,
CARSTEN UNGER , YONGSIK MOON , DAVID DORNFELD Department of
Mechanical ...
Page 161
It is shown that the higher the quality of the as - deposited film ( or post -
deposition treated film ) , the higher the quality of the polished film . The polishing
time has little effect on the surface characteristics of high quality PA - N films ,
however it ...
It is shown that the higher the quality of the as - deposited film ( or post -
deposition treated film ) , the higher the quality of the polished film . The polishing
time has little effect on the surface characteristics of high quality PA - N films ,
however it ...
Page 165
Both slurries are not suitable for PA - N polishing , due to the high RMS
roughness . Slurry - 4 , slurry - 5 , and slurry - 7 do not affect the surface structure
for PA - N films , while slurry - 3 , slurry - 6 , and slurry - 8 increase the oxygen
content ...
Both slurries are not suitable for PA - N polishing , due to the high RMS
roughness . Slurry - 4 , slurry - 5 , and slurry - 7 do not affect the surface structure
for PA - N films , while slurry - 3 , slurry - 6 , and slurry - 8 increase the oxygen
content ...
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Contents
SILK Polymer Coating With LowDielectric Constant | 9 |
F During Oxygen Plasma Annealing | 19 |
INTERFACES AND POROUS MATERIALS | 59 |
Copyright | |
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Common terms and phrases
addition adhesion analysis annealing applications atoms bond capacitance chamber chemical coating compared concentration copolymers cost cured curve cycle decrease density dependence deposited determined device dielectric constant diffusion DISCUSSION effect electrical electron energy etch etch rate experiments Figure flow fluorine formed function groups heating higher improved increase indicate integrated interconnect interface layer less lines loss low dielectric constant lower materials measured mechanical metal mode moisture observed obtained occurs oxide oxygen PA-N passivation peak performance plasma polishing polyimide polymer pressure Proc properties range ratio reaction reduced refractive index relative Research resistance respectively sample shown shows Si-F signal silicon SiO2 SiOF films spectra strength stress structure substrate surface Table Teflon temperature TEOS thermal thermal stability thickness thin films treatment wafer