Low-dielectric Constant Materials, Volume 476Materials Research Society, 1997 - Electric insulators and insulation |
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Page 155
... polishing load , wafer carrier rotation , platen rotation speed and pad age , is one of the critical issues in CMP planarization of a dielectric film when concerning productivity , throughputs and stabilization of the process ...
... polishing load , wafer carrier rotation , platen rotation speed and pad age , is one of the critical issues in CMP planarization of a dielectric film when concerning productivity , throughputs and stabilization of the process ...
Page 161
... polished film . The polishing time has little effect on the surface characteristics of high quality PA - N films , however it has an effect on BCB film . This is attributed to the structure and thermal- stability and higher chemical ...
... polished film . The polishing time has little effect on the surface characteristics of high quality PA - N films , however it has an effect on BCB film . This is attributed to the structure and thermal- stability and higher chemical ...
Page 167
... polished BCB films ( polishing time is 1 s and 20 s , respectively ) . It is clear that with the increase in polishing time , the single C - C peak at 285 eV for as - spin - on film changes into two peaks . One peak is still located at ...
... polished BCB films ( polishing time is 1 s and 20 s , respectively ) . It is clear that with the increase in polishing time , the single C - C peak at 285 eV for as - spin - on film changes into two peaks . One peak is still located at ...
Contents
Polynorbornene for Lowk Interconnection | 3 |
SILK Polymer Coating With LowDielectric Constant | 9 |
F During Oxygen Plasma Annealing | 19 |
Copyright | |
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Common terms and phrases
adhesion aerogel annealing as-deposited atoms BCB film bond BPDA-PDA capacitance Chemat-B chemical cm¹ CMP process coating copolymers cured films curve decrease delamination density deposition rate device dielectric constant dielectric material diffusion e-beam cured effect electron Figure film stress film thickness films deposited fluorinated polyimide fluorine fluoropolymer FSG films FTEOS films FTIR gap fill glass transition temperature heating in-plane increase integrated circuits interface labile block layer low dielectric constant low-k measured mechanical metal lines modulus moisture Multilevel Interconnection norbornene optical out-of-plane oxide oxygen PA-N film parylene Parylene-N peak PECVD Phys planarization plasma plasma treatment polishing polyimide polymer polymerization precursor pressure Proc properties PTFE ratio reaction refractive index sample shows Si-F Si-O-Si silica silicon SiO2 SiOF films slurry spectra spin-coated spin-on structure substrate surface Teflon-AF temperature TEOS thermal cycles thermal stability thin films ULSI vapor wafer wet etch