Low-dielectric Constant Materials, Volume 476Materials Research Society, 1997 - Electric insulators and insulation |
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Page 14
Mechanical Behavior The mechanical properties of organic polymers and
inorganic dielectrics are significantly different . It is not ... The net result is that the
stress level in a polymer dielectric is generally close to or less than standard
SiO2 .
Mechanical Behavior The mechanical properties of organic polymers and
inorganic dielectrics are significantly different . It is not ... The net result is that the
stress level in a polymer dielectric is generally close to or less than standard
SiO2 .
Page 52
polymer was studied by TGA under isothermal conditions at different
temperatures and in different atmospheres . Normally , weight - loss of Chemat -
B occured in the first 5 minutes , and converted to a stable material under that
condition .
polymer was studied by TGA under isothermal conditions at different
temperatures and in different atmospheres . Normally , weight - loss of Chemat -
B occured in the first 5 minutes , and converted to a stable material under that
condition .
Page 145
The molecular chains of many solution cast polymers align preferentially parallel
to the substrate due to the substrate ... The flexible polymer interline and MIM
capacitance results at 1 MHz ( measured Aɛ ) are consistent with refractive index
...
The molecular chains of many solution cast polymers align preferentially parallel
to the substrate due to the substrate ... The flexible polymer interline and MIM
capacitance results at 1 MHz ( measured Aɛ ) are consistent with refractive index
...
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Contents
SILK Polymer Coating With LowDielectric Constant | 9 |
F During Oxygen Plasma Annealing | 19 |
INTERFACES AND POROUS MATERIALS | 59 |
Copyright | |
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Common terms and phrases
addition adhesion analysis annealing applications atoms bond capacitance chamber chemical coating compared concentration copolymers cost cured curve cycle decrease density dependence deposited determined device dielectric constant diffusion DISCUSSION effect electrical electron energy etch etch rate experiments Figure flow fluorine formed function groups heating higher improved increase indicate integrated interconnect interface layer less lines loss low dielectric constant lower materials measured mechanical metal mode moisture observed obtained occurs oxide oxygen PA-N passivation peak performance plasma polishing polyimide polymer pressure Proc properties range ratio reaction reduced refractive index relative Research resistance respectively sample shown shows Si-F signal silicon SiO2 SiOF films spectra strength stress structure substrate surface Table Teflon temperature TEOS thermal thermal stability thickness thin films treatment wafer
Bibliographic information
| Title | Low-dielectric Constant Materials, Volume 476 Volume 381; Volume 443; Volume 476; Volume 511; Volume 565 of Materials Research Society symposia proceedings |
| Publisher | Materials Research Society, 1997 |
| Original from | the University of Michigan |
| Digitized | 10 Dec 2007 |
| ISBN | 1558993800, 9781558993808 |
| Export Citation | BiBTeX EndNote RefMan |