Low-dielectric Constant Materials, Volume 476Materials Research Society, 1997 - Electric insulators and insulation |
From inside the book
Results 1-3 of 85
Page 14
Mechanical Behavior The mechanical properties of organic polymers and inorganic dielectrics are significantly ... The net result is that the stress level in a polymer dielectric is generally close to or less than standard SiO2 .
Mechanical Behavior The mechanical properties of organic polymers and inorganic dielectrics are significantly ... The net result is that the stress level in a polymer dielectric is generally close to or less than standard SiO2 .
Page 52
polymer was studied by TGA under isothermal conditions at different temperatures and in different atmospheres . Normally , weight - loss of Chemat - B occured in the first 5 minutes , and converted to a stable material under that ...
polymer was studied by TGA under isothermal conditions at different temperatures and in different atmospheres . Normally , weight - loss of Chemat - B occured in the first 5 minutes , and converted to a stable material under that ...
Page 145
The molecular chains of many solution cast polymers align preferentially parallel to the substrate due to the substrate ... The flexible polymer interline and MIM capacitance results at 1 MHz ( measured de ) are consistent with ...
The molecular chains of many solution cast polymers align preferentially parallel to the substrate due to the substrate ... The flexible polymer interline and MIM capacitance results at 1 MHz ( measured de ) are consistent with ...
What people are saying - Write a review
We haven't found any reviews in the usual places.
Contents
Polynorbornene for Lowk Interconnection | 3 |
High Thermal Stability for ULSI Interlayer Dielectric | 9 |
F During Oxygen Plasma Annealing | 19 |
Copyright | |
33 other sections not shown
Other editions - View all
Common terms and phrases
addition adhesion analysis annealing applications atoms bond capacitance chamber chemical coating compared concentration copolymers cost cured curve cycle decrease density dependence deposited determined device dielectric constant diffusion DISCUSSION effect electrical electron energy etch etch rate experiments Figure flow fluorine formed function groups heating higher improved increase indicate integrated interconnect interface layer less lines loss low dielectric constant lower materials measured mechanical metal mode modulus moisture observed obtained occurs oxide oxygen PA-N peak performance plasma polishing polyimide polymer pressure Proc properties range ratio reaction reduced refractive index relative Research resistance respectively sample shown shows Si-F signal silicon SiO2 SiOF films solution spectra strength stress structure substrate surface Table Teflon temperature TEOS thermal thermal stability thickness thin films treatment wafer
Bibliographic information
| Title | Low-dielectric Constant Materials, Volume 476 Volume 381; Volume 443; Volume 476; Volume 511; Volume 565 of Materials Research Society symposia proceedings |
| Publisher | Materials Research Society, 1997 |
| Original from | the University of Michigan |
| Digitized | 10 Dec 2007 |
| ISBN | 1558993800, 9781558993808 |
| Export Citation | BiBTeX EndNote RefMan |