Low-dielectric Constant Materials, Volume 476Materials Research Society, 1997 - Electric insulators and insulation |
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Page 53
... porosity , or these micropores are too small for He gas to penetrate . These materials were also put in a humidity chamber at 140 ° F with 95-100 % humidity for 72 hours . No weight gain and no dielectric constant changes have been ...
... porosity , or these micropores are too small for He gas to penetrate . These materials were also put in a humidity chamber at 140 ° F with 95-100 % humidity for 72 hours . No weight gain and no dielectric constant changes have been ...
Page 93
... Porosity and void formation was also studied by small angle x - ray scattering , and calibrated IR absorption.14 The characteristics of a number of polyimide foams is shown in Table 2 . Table 2. Characteristics of Polyimide Foams ...
... Porosity and void formation was also studied by small angle x - ray scattering , and calibrated IR absorption.14 The characteristics of a number of polyimide foams is shown in Table 2 . Table 2. Characteristics of Polyimide Foams ...
Page 95
... porosities as high as 30 % . Likewise , high porosity foams of PMDA / 4 - BDAF and 6FXDA / 6FDA were generated . While PMDA / 4 - BDAF has a relatively low T , ( 305 ° C ) , it has a melting transition after annealing of > 470 ° C . We ...
... porosities as high as 30 % . Likewise , high porosity foams of PMDA / 4 - BDAF and 6FXDA / 6FDA were generated . While PMDA / 4 - BDAF has a relatively low T , ( 305 ° C ) , it has a melting transition after annealing of > 470 ° C . We ...
Contents
Polynorbornene for Lowk Interconnection | 3 |
SILK Polymer Coating With LowDielectric Constant | 9 |
F During Oxygen Plasma Annealing | 19 |
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adhesion aerogel annealing as-deposited atoms BCB film bond BPDA-PDA capacitance Chemat-B chemical cm¹ CMP process coating copolymers cured films curve decrease delamination density deposition rate device dielectric constant dielectric material diffusion e-beam cured effect electron Figure film stress film thickness films deposited fluorinated polyimide fluorine fluoropolymer FSG films FTEOS films FTIR gap fill glass transition temperature heating in-plane increase integrated circuits interface labile block layer low dielectric constant low-k measured mechanical metal lines modulus moisture Multilevel Interconnection norbornene optical out-of-plane oxide oxygen PA-N film parylene Parylene-N peak PECVD Phys planarization plasma plasma treatment polishing polyimide polymer polymerization precursor pressure Proc properties PTFE ratio reaction refractive index sample shows Si-F Si-O-Si silica silicon SiO2 SiOF films slurry spectra spin-coated spin-on structure substrate surface Teflon-AF temperature TEOS thermal cycles thermal stability thin films ULSI vapor wafer wet etch