Low-dielectric Constant Materials, Volume 476Materials Research Society, 1997 - Electric insulators and insulation |
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Page 62
... precursor was used here for reasons of sample handling convenience . The slight difference in surface chemistries between the two precursors is irrelevant to the issues explored here . Although MOCVD has been used to deposit Cu films on ...
... precursor was used here for reasons of sample handling convenience . The slight difference in surface chemistries between the two precursors is irrelevant to the issues explored here . Although MOCVD has been used to deposit Cu films on ...
Page 180
... precursor material costs would be within ± 25 % , thus justifying one calculation for all SODS . The a - CF precursor cost was assumed to be equal to SiOF's . The SOD throughput ( perhaps overly generous ) assumes that the bakes and ...
... precursor material costs would be within ± 25 % , thus justifying one calculation for all SODS . The a - CF precursor cost was assumed to be equal to SiOF's . The SOD throughput ( perhaps overly generous ) assumes that the bakes and ...
Page 239
... precursor , SiF4 , and the organic liquid precursor , TEFS . EXPERIMENTAL The films described here were deposited using Applied Materials ' single wafer , parallel plate , dual frequency , plasma CVD reactor ( DxZ chamber ) . All gases ...
... precursor , SiF4 , and the organic liquid precursor , TEFS . EXPERIMENTAL The films described here were deposited using Applied Materials ' single wafer , parallel plate , dual frequency , plasma CVD reactor ( DxZ chamber ) . All gases ...
Contents
Polynorbornene for Lowk Interconnection | 3 |
SILK Polymer Coating With LowDielectric Constant | 9 |
F During Oxygen Plasma Annealing | 19 |
Copyright | |
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Common terms and phrases
adhesion aerogel annealing as-deposited atoms BCB film bond BPDA-PDA capacitance Chemat-B chemical cm¹ CMP process coating copolymers cured films curve decrease delamination density deposition rate device dielectric constant dielectric material diffusion e-beam cured effect electron Figure film stress film thickness films deposited fluorinated polyimide fluorine fluoropolymer FSG films FTEOS films FTIR gap fill glass transition temperature heating in-plane increase integrated circuits interface labile block layer low dielectric constant low-k measured mechanical metal lines modulus moisture Multilevel Interconnection norbornene optical out-of-plane oxide oxygen PA-N film parylene Parylene-N peak PECVD Phys planarization plasma plasma treatment polishing polyimide polymer polymerization precursor pressure Proc properties PTFE ratio reaction refractive index sample shows Si-F Si-O-Si silica silicon SiO2 SiOF films slurry spectra spin-coated spin-on structure substrate surface Teflon-AF temperature TEOS thermal cycles thermal stability thin films ULSI vapor wafer wet etch