Low-dielectric Constant Materials, Volume 476Materials Research Society, 1997 - Electric insulators and insulation |
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Page 62
... precursors on a variety of metallic surfaces has been explored . Cu ( I ) precursors of the form Cu ( I ) ( hfac ) L ( L = Lewis base ) react in the following manner : 9,10 ( 2a ) Cu ( I ) ( hfac ) L → Cu ( I ) ( hfac ) , + L ↑ ( 2b ) ...
... precursors on a variety of metallic surfaces has been explored . Cu ( I ) precursors of the form Cu ( I ) ( hfac ) L ( L = Lewis base ) react in the following manner : 9,10 ( 2a ) Cu ( I ) ( hfac ) L → Cu ( I ) ( hfac ) , + L ↑ ( 2b ) ...
Page 105
... precursor sol on silicon substrates . Films of various compositions were prepared using combinations of the following precursors : methyltrimethoxysilane , dimethoxydimethylsilane and tetramethoxysilane ( TMOS ) . The hybrid films ...
... precursor sol on silicon substrates . Films of various compositions were prepared using combinations of the following precursors : methyltrimethoxysilane , dimethoxydimethylsilane and tetramethoxysilane ( TMOS ) . The hybrid films ...
Page 239
... precursors such as tri - ethoxy - fluoro - silane ( TEFS ) [ 14,15 ] and 1,2 bis [ methyldifluorosilyl ) ethane ( FASI - 4 ) [ 16,17 ] have been used . This paper reports on the FTEOS films obtained using the inorganic gaseous precursor ...
... precursors such as tri - ethoxy - fluoro - silane ( TEFS ) [ 14,15 ] and 1,2 bis [ methyldifluorosilyl ) ethane ( FASI - 4 ) [ 16,17 ] have been used . This paper reports on the FTEOS films obtained using the inorganic gaseous precursor ...
Contents
Polynorbornene for Lowk Interconnection | 3 |
SILK Polymer Coating With LowDielectric Constant | 9 |
F During Oxygen Plasma Annealing | 19 |
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adhesion aerogel annealing as-deposited atoms BCB film bond BPDA-PDA capacitance Chemat-B chemical cm¹ CMP process coating copolymers cured films curve decrease delamination density deposition rate device dielectric constant dielectric material diffusion e-beam cured effect electron Figure film stress film thickness films deposited fluorinated polyimide fluorine fluoropolymer FSG films FTEOS films FTIR gap fill glass transition temperature heating in-plane increase integrated circuits interface labile block layer low dielectric constant low-k measured mechanical metal lines modulus moisture Multilevel Interconnection norbornene optical out-of-plane oxide oxygen PA-N film parylene Parylene-N peak PECVD Phys planarization plasma plasma treatment polishing polyimide polymer polymerization precursor pressure Proc properties PTFE ratio reaction refractive index sample shows Si-F Si-O-Si silica silicon SiO2 SiOF films slurry spectra spin-coated spin-on structure substrate surface Teflon-AF temperature TEOS thermal cycles thermal stability thin films ULSI vapor wafer wet etch