Low-dielectric Constant Materials, Volume 476Materials Research Society, 1997 - Electric insulators and insulation |
From inside the book
Results 1-3 of 26
Page 147
METALIZED POLYPROPYLENE FILM IN CAPACITORS : CHARACTERIZATION AND THE EFFECT OF INTERFACIAL PRESSURE ON THE DIELECTRIC STRENGTH Shalabh Tandon and Richard J. Farris Silvio O Conte Building Polymer Science and Engineering Department ...
METALIZED POLYPROPYLENE FILM IN CAPACITORS : CHARACTERIZATION AND THE EFFECT OF INTERFACIAL PRESSURE ON THE DIELECTRIC STRENGTH Shalabh Tandon and Richard J. Farris Silvio O Conte Building Polymer Science and Engineering Department ...
Page 151
Under pressure the catastrophic failure of the film occurs at ~ 7.8kV , however , a clearing event ( or localized breakdown ) is ... as a dielectric material , after initial failure , is not seen for tests performed at lower pressures .
Under pressure the catastrophic failure of the film occurs at ~ 7.8kV , however , a clearing event ( or localized breakdown ) is ... as a dielectric material , after initial failure , is not seen for tests performed at lower pressures .
Page 152
pressure gas dilatometry , PVT , TMA , tensile testing , has been used to mechanically characterize the metalized PP film widely used in the capacitor industry . The orthotropic film has large differences in its out - of - plane modulus ...
pressure gas dilatometry , PVT , TMA , tensile testing , has been used to mechanically characterize the metalized PP film widely used in the capacitor industry . The orthotropic film has large differences in its out - of - plane modulus ...
What people are saying - Write a review
We haven't found any reviews in the usual places.
Contents
Polynorbornene for Lowk Interconnection | 3 |
High Thermal Stability for ULSI Interlayer Dielectric | 9 |
F During Oxygen Plasma Annealing | 19 |
Copyright | |
33 other sections not shown
Other editions - View all
Common terms and phrases
addition adhesion analysis annealing applications atoms bond capacitance chamber chemical coating compared concentration copolymers cost cured curve cycle decrease density dependence deposited determined device dielectric constant diffusion DISCUSSION effect electrical electron energy etch etch rate experiments Figure flow fluorine formed function groups heating higher improved increase indicate integrated interconnect interface layer less lines loss low dielectric constant lower materials measured mechanical metal mode modulus moisture observed obtained occurs oxide oxygen PA-N peak performance plasma polishing polyimide polymer pressure Proc properties range ratio reaction reduced refractive index relative Research resistance respectively sample shown shows Si-F signal silicon SiO2 SiOF films solution spectra strength stress structure substrate surface Table Teflon temperature TEOS thermal thermal stability thickness thin films treatment wafer
Bibliographic information
| Title | Low-dielectric Constant Materials, Volume 476 Volume 381; Volume 443; Volume 476; Volume 511; Volume 565 of Materials Research Society symposia proceedings |
| Publisher | Materials Research Society, 1997 |
| Original from | the University of Michigan |
| Digitized | 10 Dec 2007 |
| ISBN | 1558993800, 9781558993808 |
| Export Citation | BiBTeX EndNote RefMan |