Low-dielectric Constant Materials, Volume 476Materials Research Society, 1997 - Electric insulators and insulation |
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Page 4
However , polyimides are lacking in several key performance properties . The dielectric constants are higher than desired and generally fall between 3.0 and 3.5 . The moisture uptake is as high as 2.0 % and can be detrimental to the ...
However , polyimides are lacking in several key performance properties . The dielectric constants are higher than desired and generally fall between 3.0 and 3.5 . The moisture uptake is as high as 2.0 % and can be detrimental to the ...
Page 5
The films also have excellent adhesive properties to silicon , silicon dioxide , aluminum , silver , gold , and copper and pass the tape test even after being placed in boiling water for two hours . R Figure 1.
The films also have excellent adhesive properties to silicon , silicon dioxide , aluminum , silver , gold , and copper and pass the tape test even after being placed in boiling water for two hours . R Figure 1.
Page 37
Reported herein is the effect of soak temperature , time , and oxygen concentration process parameters on structure and properties of hydrogen silsesquioxane . Results of the study emphasize the importance of an inert environment during ...
Reported herein is the effect of soak temperature , time , and oxygen concentration process parameters on structure and properties of hydrogen silsesquioxane . Results of the study emphasize the importance of an inert environment during ...
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Contents
Polynorbornene for Lowk Interconnection | 3 |
High Thermal Stability for ULSI Interlayer Dielectric | 9 |
F During Oxygen Plasma Annealing | 19 |
Copyright | |
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addition adhesion analysis annealing applications atoms bond capacitance chamber chemical coating compared concentration copolymers cost cured curve cycle decrease density dependence deposited determined device dielectric constant diffusion DISCUSSION effect electrical electron energy etch etch rate experiments Figure flow fluorine formed function groups heating higher improved increase indicate integrated interconnect interface layer less lines loss low dielectric constant lower materials measured mechanical metal mode modulus moisture observed obtained occurs oxide oxygen PA-N peak performance plasma polishing polyimide polymer pressure Proc properties range ratio reaction reduced refractive index relative Research resistance respectively sample shown shows Si-F signal silicon SiO2 SiOF films solution spectra strength stress structure substrate surface Table Teflon temperature TEOS thermal thermal stability thickness thin films treatment wafer