Low-dielectric Constant Materials, Volume 476Materials Research Society, 1997 - Electric insulators and insulation |
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Page 233
... quench on a chill plate at a temperature of 13 ° C . The second method allowed the wafer to gradually heat up to 390 ... quenched process was measured to be 700 ° C / sec , the cooling rate for the oven sintered process was measured to ...
... quench on a chill plate at a temperature of 13 ° C . The second method allowed the wafer to gradually heat up to 390 ... quenched process was measured to be 700 ° C / sec , the cooling rate for the oven sintered process was measured to ...
Page 234
... quench 350 trimethoxysilane ( PATS ) aminopropyldimethyl- mono quench 160 methoxysilane ( APMS ) ( triaminodiethyl ) propyl- tri quench 530 trimethoxysilane ( AETS ) Dielectric Strength The values for metal - insulator - metal ( MIM ) ...
... quench 350 trimethoxysilane ( PATS ) aminopropyldimethyl- mono quench 160 methoxysilane ( APMS ) ( triaminodiethyl ) propyl- tri quench 530 trimethoxysilane ( AETS ) Dielectric Strength The values for metal - insulator - metal ( MIM ) ...
Page 235
... quenched films are considered acceptable for use in integrated circuits . In particular , the leakage current ... quenched films is shown in Figures 3 and 4. These are surface SEM photographs . Note the contrast in the structure : The ...
... quenched films are considered acceptable for use in integrated circuits . In particular , the leakage current ... quenched films is shown in Figures 3 and 4. These are surface SEM photographs . Note the contrast in the structure : The ...
Contents
Polynorbornene for Lowk Interconnection | 3 |
SILK Polymer Coating With LowDielectric Constant | 9 |
F During Oxygen Plasma Annealing | 19 |
Copyright | |
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adhesion aerogel annealing as-deposited atoms BCB film bond BPDA-PDA capacitance Chemat-B chemical cm¹ CMP process coating copolymers cured films curve decrease delamination density deposition rate device dielectric constant dielectric material diffusion e-beam cured effect electron Figure film stress film thickness films deposited fluorinated polyimide fluorine fluoropolymer FSG films FTEOS films FTIR gap fill glass transition temperature heating in-plane increase integrated circuits interface labile block layer low dielectric constant low-k measured mechanical metal lines modulus moisture Multilevel Interconnection norbornene optical out-of-plane oxide oxygen PA-N film parylene Parylene-N peak PECVD Phys planarization plasma plasma treatment polishing polyimide polymer polymerization precursor pressure Proc properties PTFE ratio reaction refractive index sample shows Si-F Si-O-Si silica silicon SiO2 SiOF films slurry spectra spin-coated spin-on structure substrate surface Teflon-AF temperature TEOS thermal cycles thermal stability thin films ULSI vapor wafer wet etch