Low-dielectric Constant Materials, Volume 476Materials Research Society, 1997 - Electric insulators and insulation |
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Results 1-3 of 34
Page 47
... ratio studied ( CF4 / CHF3 = 0.2-1.2 ) ( Fig . 4 ) and increases at higher RF power ( Fig . 1 ) and higher magnetic ... RATIO CF4 : CHF3 Figure 4. SOP - 418 / TEOS / SOG - T11 etch rate and non - uniformity vs. gas flow ratio CF4 : CHF3 ...
... ratio studied ( CF4 / CHF3 = 0.2-1.2 ) ( Fig . 4 ) and increases at higher RF power ( Fig . 1 ) and higher magnetic ... RATIO CF4 : CHF3 Figure 4. SOP - 418 / TEOS / SOG - T11 etch rate and non - uniformity vs. gas flow ratio CF4 : CHF3 ...
Page 48
... ratio of etch rates is plotted in Fig . 5 as etch selectivity of SOG - T11 and SOP - 418 with respect to TEOS as a function of CF4 / CHF3 flow ratio showing a large off - set for the two curves . In addition , the slope difference of ...
... ratio of etch rates is plotted in Fig . 5 as etch selectivity of SOG - T11 and SOP - 418 with respect to TEOS as a function of CF4 / CHF3 flow ratio showing a large off - set for the two curves . In addition , the slope difference of ...
Page 49
... RATIO CF4 : CHF3 Figure 7. Etch selectivities of various SOGS ( T11,418 ) relative to various liner films ( TEOS , A - SION , and B - SION ) vs. gas flow ratio CF4 / CHF3 . 1.5 ETCH RATE SELECTIVITY 1.25 -T11 / TEOS OT11 / A - SION -T11 ...
... RATIO CF4 : CHF3 Figure 7. Etch selectivities of various SOGS ( T11,418 ) relative to various liner films ( TEOS , A - SION , and B - SION ) vs. gas flow ratio CF4 / CHF3 . 1.5 ETCH RATE SELECTIVITY 1.25 -T11 / TEOS OT11 / A - SION -T11 ...
Contents
Polynorbornene for Lowk Interconnection | 3 |
SILK Polymer Coating With LowDielectric Constant | 9 |
F During Oxygen Plasma Annealing | 19 |
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Common terms and phrases
adhesion aerogel annealing as-deposited atoms BCB film bond BPDA-PDA capacitance Chemat-B chemical cm¹ CMP process coating copolymers cured films curve decrease delamination density deposition rate device dielectric constant dielectric material diffusion e-beam cured effect electron Figure film stress film thickness films deposited fluorinated polyimide fluorine fluoropolymer FSG films FTEOS films FTIR gap fill glass transition temperature heating in-plane increase integrated circuits interface labile block layer low dielectric constant low-k measured mechanical metal lines modulus moisture Multilevel Interconnection norbornene optical out-of-plane oxide oxygen PA-N film parylene Parylene-N peak PECVD Phys planarization plasma plasma treatment polishing polyimide polymer polymerization precursor pressure Proc properties PTFE ratio reaction refractive index sample shows Si-F Si-O-Si silica silicon SiO2 SiOF films slurry spectra spin-coated spin-on structure substrate surface Teflon-AF temperature TEOS thermal cycles thermal stability thin films ULSI vapor wafer wet etch