Low-dielectric Constant Materials, Volume 476Materials Research Society, 1997 - Electric insulators and insulation |
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Page 47
With higher CF4 / CHF3 flow ratio ( Fig . 4 ) , the increase of SOP - 418 etch rate ( solid circle ) is much more pronounced than TEOS ( solid square ) due to less polymer formation , providing a means of tuning etch selectivity .
With higher CF4 / CHF3 flow ratio ( Fig . 4 ) , the increase of SOP - 418 etch rate ( solid circle ) is much more pronounced than TEOS ( solid square ) due to less polymer formation , providing a means of tuning etch selectivity .
Page 48
The ratio of etch rates is plotted in Fig . 5 as etch selectivity of SOG - T11 and SOP - 418 with respect to TEOS as a function of CF4 / CHF3 flow ratio showing a large off - set for the two curves . In addition , the slope difference ...
The ratio of etch rates is plotted in Fig . 5 as etch selectivity of SOG - T11 and SOP - 418 with respect to TEOS as a function of CF4 / CHF3 flow ratio showing a large off - set for the two curves . In addition , the slope difference ...
Page 49
1.5 OT11 / TEOS 1.25 OT11 / A - SION 1 OT11 / B - SION 418 / TEOS 0.75 1418 / A - SION 418 / B - SION 0.5 0.2 1.2 0.4 0.6 0.8 GAS FLOW RATIO CF4 : CHF3 Figure 7. Etch selectivities of various SOGs ( T11,418 ) relative to various liner ...
1.5 OT11 / TEOS 1.25 OT11 / A - SION 1 OT11 / B - SION 418 / TEOS 0.75 1418 / A - SION 418 / B - SION 0.5 0.2 1.2 0.4 0.6 0.8 GAS FLOW RATIO CF4 : CHF3 Figure 7. Etch selectivities of various SOGs ( T11,418 ) relative to various liner ...
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Contents
Polynorbornene for Lowk Interconnection | 3 |
High Thermal Stability for ULSI Interlayer Dielectric | 9 |
F During Oxygen Plasma Annealing | 19 |
Copyright | |
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addition adhesion analysis annealing applications atoms bond capacitance chamber chemical coating compared concentration copolymers cost cured curve cycle decrease density dependence deposited determined device dielectric constant diffusion DISCUSSION effect electrical electron energy etch etch rate experiments Figure flow fluorine formed function groups heating higher improved increase indicate integrated interconnect interface layer less lines loss low dielectric constant lower materials measured mechanical metal mode modulus moisture observed obtained occurs oxide oxygen PA-N peak performance plasma polishing polyimide polymer pressure Proc properties range ratio reaction reduced refractive index relative Research resistance respectively sample shown shows Si-F signal silicon SiO2 SiOF films solution spectra strength stress structure substrate surface Table Teflon temperature TEOS thermal thermal stability thickness thin films treatment wafer