Low-dielectric Constant Materials, Volume 476Materials Research Society, 1997 - Electric insulators and insulation |
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Page 40
At elevated temperatures , reactions occur which convert porous hydrogen silsesquioxane to relatively dense amorphous silica . A thermally activated rearrangement reaction , similar to crosslinking , cures hydrogen silsesquioxane from a ...
At elevated temperatures , reactions occur which convert porous hydrogen silsesquioxane to relatively dense amorphous silica . A thermally activated rearrangement reaction , similar to crosslinking , cures hydrogen silsesquioxane from a ...
Page 79
The formation of oxidation products on the surface and along the grain boundary ( accumulated in the triple junctions ) is the possible reaction mechanism . forOCE3 Fig . 5. Synthetic scheme for fluorinated polyimide [ 15 , 17 ) .
The formation of oxidation products on the surface and along the grain boundary ( accumulated in the triple junctions ) is the possible reaction mechanism . forOCE3 Fig . 5. Synthetic scheme for fluorinated polyimide [ 15 , 17 ) .
Page 261
In this study , SIMS , SEM , and optical microscope analyses were carried out to evaluate the thermal stability of the FSG films and the possible reactions between FSG and metals . It was observed that at elevated temperatures fluorine ...
In this study , SIMS , SEM , and optical microscope analyses were carried out to evaluate the thermal stability of the FSG films and the possible reactions between FSG and metals . It was observed that at elevated temperatures fluorine ...
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Contents
Polynorbornene for Lowk Interconnection | 3 |
High Thermal Stability for ULSI Interlayer Dielectric | 9 |
F During Oxygen Plasma Annealing | 19 |
Copyright | |
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Common terms and phrases
addition adhesion analysis annealing applications atoms bond capacitance chamber chemical coating compared concentration copolymers cost cured curve cycle decrease density dependence deposited determined device dielectric constant diffusion DISCUSSION effect electrical electron energy etch etch rate experiments Figure flow fluorine formed function groups heating higher improved increase indicate integrated interconnect interface layer less lines loss low dielectric constant lower materials measured mechanical metal mode modulus moisture observed obtained occurs oxide oxygen PA-N peak performance plasma polishing polyimide polymer pressure Proc properties range ratio reaction reduced refractive index relative Research resistance respectively sample shown shows Si-F signal silicon SiO2 SiOF films solution spectra strength stress structure substrate surface Table Teflon temperature TEOS thermal thermal stability thickness thin films treatment wafer
Bibliographic information
| Title | Low-dielectric Constant Materials, Volume 476 Volume 381; Volume 443; Volume 476; Volume 511; Volume 565 of Materials Research Society symposia proceedings |
| Publisher | Materials Research Society, 1997 |
| Original from | the University of Michigan |
| Digitized | 10 Dec 2007 |
| ISBN | 1558993800, 9781558993808 |
| Export Citation | BiBTeX EndNote RefMan |