Low-dielectric Constant Materials, Volume 476Materials Research Society, 1997 - Electric insulators and insulation |
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Results 1-3 of 54
Page 155
... reduced through reduction of chip capacitance . In addition , low - k dielectric materials improve isolation between transistors and reduce power dissipation in devices . There is a trend for low - k dielectric materials to replace ...
... reduced through reduction of chip capacitance . In addition , low - k dielectric materials improve isolation between transistors and reduce power dissipation in devices . There is a trend for low - k dielectric materials to replace ...
Page 272
... reduced the activity and mobility of fluorine . Conversely the Ti in sample e may have been consumed by ( Al ) to form Al3 Ti compound , reducing its diffusivity considerably . While the use of a Ti under- or cap layer may help prevent ...
... reduced the activity and mobility of fluorine . Conversely the Ti in sample e may have been consumed by ( Al ) to form Al3 Ti compound , reducing its diffusivity considerably . While the use of a Ti under- or cap layer may help prevent ...
Page 273
... reduced by 20 % [ 1-3 ] . IR data in Refs . 1,2 and 3 have provided the basis for identifying local bonding arrangements of the F alloy atoms , leading to the characterization of this system as a pseudo - binary alloy . The IR studies ...
... reduced by 20 % [ 1-3 ] . IR data in Refs . 1,2 and 3 have provided the basis for identifying local bonding arrangements of the F alloy atoms , leading to the characterization of this system as a pseudo - binary alloy . The IR studies ...
Contents
Polynorbornene for Lowk Interconnection | 3 |
SILK Polymer Coating With LowDielectric Constant | 9 |
F During Oxygen Plasma Annealing | 19 |
Copyright | |
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Common terms and phrases
adhesion aerogel annealing as-deposited atoms BCB film bond BPDA-PDA capacitance Chemat-B chemical cm¹ CMP process coating copolymers cured films curve decrease delamination density deposition rate device dielectric constant dielectric material diffusion e-beam cured effect electron Figure film stress film thickness films deposited fluorinated polyimide fluorine fluoropolymer FSG films FTEOS films FTIR gap fill glass transition temperature heating in-plane increase integrated circuits interface labile block layer low dielectric constant low-k measured mechanical metal lines modulus moisture Multilevel Interconnection norbornene optical out-of-plane oxide oxygen PA-N film parylene Parylene-N peak PECVD Phys planarization plasma plasma treatment polishing polyimide polymer polymerization precursor pressure Proc properties PTFE ratio reaction refractive index sample shows Si-F Si-O-Si silica silicon SiO2 SiOF films slurry spectra spin-coated spin-on structure substrate surface Teflon-AF temperature TEOS thermal cycles thermal stability thin films ULSI vapor wafer wet etch